With an investment of RMB 1.8 billion, the National Third Generation Semiconductor Technology Innovation Center R&D and Industrial Base started construction

On January 4, the construction of the R&D and industrialization base of the National Third Generation Semiconductor Technology Innovation Center started. The total investment of the project exceeds 1.8 billion yuan, and the investment driven is expected to exceed 5 billion yuan. It is scheduled to be completed by the end of December 2023.

It is reported that the National Third Generation Semiconductor Technology Innovation Center R&D and Industrialization Base Project is located in Suzhou Nano City, with an area of ​​105 mu in the first phase and a total construction area of ​​over 200,000 square meters. The base is built by Suzhou Nano Technology Development Co., Ltd. The first phase includes the National Third Generation Semiconductor Technology Innovation Center, as well as some fixed-construction enterprises such as the East Micro Semiconductor Headquarters, Hantianxia R&D Center and Leiming Laser R&D Center Headquarters. It will build 30,000 square meters of high-standard clean workshops and chemical warehouses, wastewater treatment stations, 110 kV power stations and other supporting facilities to support the innovative development of third-generation semiconductors, as well as 8-inch BAW (bulk acoustic wave) filter and RF module production lines, semiconductor high-end laser research centers, wafer and device performance testing R&D engineering centers, etc.

According to Suzhou Industrial Park, after the project is completed, it will accelerate the agglomeration and development of third-generation semiconductor materials, equipment, and innovation chain enterprises such as R&D, design, pilot production, mass production, packaging and testing, and radiate to gather 50 to 100 enterprises, which will strongly support the key technology research and transformation of third-generation semiconductors.