Qianjing Semiconductor's first batch of silicon carbide substrates undergo process verification

Recently, the silicon carbide substrate wafer developed by Hangzhou Qianjing Semiconductor Co., Ltd. (hereinafter referred to as Qianjing Semiconductor) passed the company's internal quality inspection and met the product quality standards of the same industry.

According to Qianjing Semiconductor, the first batch of samples were officially provided to clients for process verification on November 3. Currently, it has reached a strategic cooperation intention with Chinese and Japanese companies and can provide 4- and 6-inch silicon carbide ingots and wafers to domestic and foreign customers.

It is reported that in July 2020, Hangzhou Qianjing Semiconductor was established in the Hangzhou International Science and Technology Innovation Center of Zhejiang University. It focuses on the field of third-generation semiconductor materials and is a high-tech enterprise integrating semiconductor silicon carbide (SiC) single crystal growth, wafer processing and equipment development. Its core team comes from the State Key Laboratory of Silicon Materials of Zhejiang University. It has established a joint laboratory with the Advanced Semiconductor Research Institute of the Science and Technology Innovation Center of Zhejiang University to jointly undertake the industrialization of SiC materials, and strive to become an internationally renowned third-generation semiconductor material brand and benchmark enterprise in three to five years.