Yunnan University makes breakthrough in research on photoelectric properties of semiconductor material platinum sulfide

Recently, through continuous research and development, the team of Yang Peng and Wan Yanfen from the School of Materials and Energy of Yunnan University has solved a series of problems in the synthesis of large-area uniform few-layer platinum sulfide graphene-like materials and their structure and physical properties, providing support for the development of devices for richer application scenarios, injecting new hope into the coming end of Moore's Law, and providing semiconductor materials with great potential.

Image source: Science and Technology Daily

According to Science and Technology Daily, Yang Peng, an associate professor at Yunnan University, said that graphene, as a typical two-dimensional nanomaterial, has a series of excellent properties such as chemistry, light, electricity, and mechanics, and is widely used. However, graphene has shortcomings such as zero band gap and low light absorption, which limit its wider application. At the same time, graphene-like materials came into being. As a typical representative of graphene-like materials, transition metal chalcogenides not only have a layered structure similar to graphene's van der Waals force bond, but also have excellent optical, electrical, and magnetic properties, which can better make up for the shortcomings of graphene and greatly broaden the practical application range of semiconductor materials.

The common problems faced by two-dimensional materials today, such as small material area and difficulty in transfer, have had a certain impact on the development of the semiconductor industry.

To address these challenges, Yang Peng and Wan Yanfen's team from the School of Materials and Energy of Yunnan University and the Yunnan Key Laboratory of Micro-Nano Materials and Technology, combined physical vapor deposition and chemical vapor deposition to prepare large-area, few-layer, uniform platinum sulfide materials at the square centimeter level under appropriate temperature, pressure and other conditions, and characterized the relevant physical properties.

It is reported that this research result provides a new idea and technical basis for the development of large-area electronic devices, and provides an important reference for expanding the application scope of transition metal chalcogenides in the future. The relevant research results were published in the internationally renowned materials academic journal "Modern Materials Physics".