Class D Power Audio Amplifier Circuit Design Using MD7120 MOSFET Driver

Publisher:快乐行者Latest update time:2024-04-30 Source: elecfans Reading articles on mobile phones Scan QR code
Read articles on your mobile phone anytime, anywhere

This is the circuit design of a Class D power audio amplifier using IC MD7120 as a MOSFET driver. MD7120 is used to drive four N-channel MOSFET transistors operating on both sides of the H-bridge switch. It consists of a controller logic circuit, a level shifter, two bootstrap powered high-side gate drivers, two VDD powered low-side gate drivers, and an overcurrent protection circuit (without using a current sense resistor). The overcurrent protection thresholds for both the high and low sides are individually resistor programmable.

wKgZomTDR-2ARcfjAAJwocAspio259.png

The MD7120 is designed to drive 3.0A fast switching MOSFETs with well matched input to output propagation delays between high and low sides and from channel A to channel B. The circuit uses a direct coupling approach in its internal level shifter from the logic input to the gate of the N-channel power MOSFET.


The MD7120 input logic voltage can be set to any voltage between 1.8 and 5.0V by connecting the EN pin H logic voltage level to the same level as the switch control input. The internal EN pin circuit will calculate the logic threshold when high and disable the output when low. The MD7120 is packaged in a low inductance, heat-resistant, 32-pin, 7.00×7.00mm QFN package. If a suitable PCB heat sink is used, the IC power dissipation is approximately 3.5W.


The high-side power MOSFET drain can be connected to a high voltage supply, while the bottom N-channel MOSFET source is grounded if connected to a single high voltage supply. In this case, the digital audio signal processor IC output can be directly connected to the MD7120 input with a ground reference level without the need for a level shifter. However, the speaker or single channel output reference cannot be grounded.


Reference address:Class D Power Audio Amplifier Circuit Design Using MD7120 MOSFET Driver

Previous article:Active antenna amplifier circuit diagram for FM radio
Next article:How to design a human interactive smart home system based on PSoC6?

Recommended ReadingLatest update time:2024-11-16 09:48

Toshiba Launches Thin-Package High-Peak Output Current Photocoupler for IGBT/MOSFET Gate Drive
Toshiba Launches Thin-Package High-Peak Output Current Photocoupler for IGBT/MOSFET Gate Drive Shanghai, China, November 30, 2021 – Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced the launch of two photocouplers in a thin SO6L package, the “TLP5705H” and “TLP5702H”, which
[Power Management]
Toshiba Launches Thin-Package High-Peak Output Current Photocoupler for IGBT/MOSFET Gate Drive
Power system design optimization tips: Monolithic driver + MOSFET (DrMOS)
At present, multi-core architecture makes microprocessors denser and faster on a horizontal scale, which dramatically increases the power required by these devices. This directly leads to the need to upgrade the voltage regulator module (VRM) that powers the microprocessor: First, the power density (power per un
[Power Management]
Power system design optimization tips: Monolithic driver + MOSFET (DrMOS)
Latest Embedded Articles
Change More Related Popular Components

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews


Room 1530, 15th Floor, Building B, No.18 Zhongguancun Street, Haidian District, Beijing, Postal Code: 100190 China Telephone: 008610 8235 0740

Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号