Infineon Technologies Expands Radiation-Hardened Asynchronous Static Random Access Memory (RAM) Product Line with Embedded Error Correction Code (ECC)

Infineon Technologies expands its radiation-hardened asynchronous static random access memory (RAM) product line with embedded error correction code (ECC) for extreme environments such as aviation

[Munich, Germany, January 15, 2024] Edge computing and inference on satellites enable near real-time data analysis and decision making. This becomes increasingly important as the number of connected devices and the amount of data they generate continues to grow. To meet these high-performance computing needs in space applications, Infineon Technologies LLC Memory Solution, a subsidiary of Infineon Technologies AG, recently announced the launch of the latest radiation-hardened (rad hard) asynchronous static random access memory designed with Infineon's patented RADSTOP™ technology . The new product is designed for space and other harsh environment applications where high reliability and high performance are extremely critical.

Infineon Radiation Hard Asynchronous SRAM

In high-performance space computing, data buffering requires more memory than what can be provided by the on-chip memory of the MCU or FPGA. The memory must provide higher performance for real-time processing applications and have excellent radiation resistance to meet the mission requirements in harsh environments. Infineon's new radiation-hardened static random access memory (SRAM) is available in 8-bit, 16-bit and 32-bit wide configurations with embedded error correction code (ECC) capable of single-bit error correction. This advanced technology enables the error correction code (ECC) logic to detect and correct single-bit errors in any read data word during the read cycle.

Dr. Helmut Puchner, Vice President and Fellow, Aerospace & Defense Business, Infineon Technologies, said: “Radiation effects lead to unavoidable bit errors in static random access memory (SRAM), and the use of system-level error correction code (ECC) increases design complexity and delays. Infineon’s RADSTOP asynchronous static random access memory (SRAM) provides an extremely reliable single-chip solution that can solve these problems while meeting the radiation hardening performance requirements of the space industry.”

Infineon's leading RADSTOP technology achieves radiation resistance through independent design and process enhancement technology, meeting all radiation resistance requirements in extreme environments . This new radiation-resistant memory has obtained QML-V certification to ensure reliability and life cycle requirements in extreme environments. These semiconductor devices have access times as short as 10 ns, making them the fastest option available. In addition, they also provide the smallest footprint for the highest density and lowest static current. RADSTOP memory solutions extend the computing limits of the entire system while offering size, weight and power consumption advantages as well as greater design flexibility.