Microchip Introduces Latest Generation of 700 and 1200V Silicon Carbide Schottky Barrier Diodes for Automotive Applications

The wave of automotive electrification is sweeping the world, and high-voltage automotive systems such as motors, on-board chargers and DC/DC converters in electric vehicles require innovative power technologies such as silicon carbide (SiC). Microchip Technology Inc. (Microchip Technology) today announced the launch of the latest certified 700 and 1200V silicon carbide (SiC) Schottky barrier diode (SBD) power devices, providing electric vehicle (EV) system designers with solutions that meet stringent automotive quality standards while supporting a wide range of voltage, current and packaging options.

Microchip's new devices are AEC-Q101 qualified, which can maximize system reliability and durability for electric vehicle power designers who need to improve system efficiency while maintaining high quality, and achieve stable and long-lasting application life. The excellent avalanche rectification performance of the new devices allows designers to reduce the need for external protection circuits, reducing system cost and complexity.

“As a long-time supplier to the automotive industry, Microchip continues to expand its automotive power solutions and lead the power system transformation in vehicle electrification,” said Leon Gross, vice president of Microchip’s discrete products business unit. “We remain focused on providing automotive solutions that help customers easily transition to silicon carbide (SiC) while minimizing the risk of quality, supply and support challenges.”

Microchip has been a supplier to the automotive industry for more than 25 years. With silicon carbide (SiC) technology and multiple IATF 16949:2016 certified manufacturing facilities, the company can provide high-quality devices through flexible manufacturing solutions to help minimize supply chain risks.

经过Microchip内部以及第三方测试，关键可靠性指标已经证明，与其他厂商生产的SiC器件相比，Microchip 的器件性能更加卓越。与其他在极端条件下出现性能下降的碳化硅（ SiC） 器件不同，Microchip 器件性能保持稳定，有助于延长应用寿命。Microchip 碳化硅（SiC）解决方案的可靠性和耐用性在业界处于领先水平。其耐用性测试表明，Microchip 的碳化硅肖特基二极管（SiC SBD）在非箝位电感开关（UIS）中的能量承受能力提升20%，在高温下电流泄漏水平最低，从而可以延长系统寿命，实现更可靠的运行。

Microchip's SiC automotive power devices further expand its rich portfolio of controllers, analog and connectivity solutions, providing designers with overall system solutions for electric vehicles and charging stations. Microchip also uses the latest generation of silicon carbide (SiC) die to provide a wide range of 700, 1200 and 1700V silicon carbide Schottky diodes (SiC SBD) and metal oxide semiconductor field effect transistor (MOSFET) power modules. In addition, Microchip's dsPIC® digital signal controllers provide high performance, low power consumption and flexible peripherals. Microchip's AgileSwitch® series of digital programmable gate drivers further accelerates the process from the design stage to production. These solutions can also be applied to renewable energy, power grids, industry, transportation, medical, data centers, aerospace and defense systems.

development tools

Microchip's AEC-Q101 qualified silicon carbide Schottky diode (SiC SBD) devices support SPICE and PLECS simulation models and MPLAB® Mindi™ simulator. Also provided is a PLECS reference design model of Microchip's SBD (1200V, 50A) as part of the power stage, the Vienna three-phase power factor correction (PFC) reference design.