CISSOID and the Institute of Electrical Engineering of the Chinese Academy of Sciences jointly promote the widespread application of silicon carbide power devices

Silicon carbide power modules with high temperature resistant drivers will help accelerate the development of new energy vehicles

CISSOID, a leader in high-temperature semiconductor solutions required by various industries, recently announced that the company has reached a strategic partnership with the Institute of Electrical Engineering of the Chinese Academy of Sciences (CAS EE), and will jointly carry out system research and development projects based on silicon carbide (SiC) power modules, overcome technical difficulties, achieve advantages such as high temperature resistance, high voltage resistance, high energy density, and high efficiency, and promote the widespread application of silicon carbide power devices in the field of new energy vehicles.

In recent years, silicon carbide power devices have gradually replaced traditional silicon devices in some fields due to their many performance advantages. At the same time, the rapid development of new energy vehicles around the world has driven the market size of silicon carbide devices to continue to expand. Currently, top international car manufacturers such as Tesla and Toyota have started early applications of silicon carbide power devices in the field of new energy vehicles. However, in automotive applications,In order to give full play to the advantages of silicon carbide devices, the driver needs to provide full support in terms of high temperature resistance and extremely stringent protection mechanisms. CISSOID is a leading high-temperature semiconductor solution manufacturer from Belgium. It has high-temperature resistant, high-reliability, and high-robustness components and driver products that have been verified in multiple high-end fields such as aerospace, petroleum, and automobiles for more than 10 years. They can enable silicon carbide power modules to fully exert their performance in the system, thereby helping to improve the power operation level and cruising range of new energy vehicles.

Institute of Electrical Engineering, Chinese Academy of SciencesIt is a national scientific research institution with electrical science and engineering as its discipline , focusing on the development of high-tech in the field of electric energy and cutting-edge research in electrical science.The Institute of Electrical Engineering of the Chinese Academy of Sciences has a research history of more than 20 years in the field of electric vehicles. It has undertaken and completed dozens of important national and local scientific and technological research tasks related to electric vehicles. It has taken the lead in China in developing the basic theory and key technology of high-power density motor drives for vehicles. Its products and technologies have been successfully applied to demonstration projects such as the 2008 Beijing Olympic Games and the 2010 Shanghai World Expo.It enjoys a high reputation and wide influence among international peers . In recent years, the Institute of Electrical Engineering of the Chinese Academy of Sciences has taken the lead in conducting research in wide bandgap semiconductors , and has successfully developed direct-cooled silicon carbide hybrid power modules with independent intellectual property rights, new indirect cooling film capacitor components and all-silicon carbide high power density drive motor controller prototypes, and some key indicators such as power density and efficiency have reached the international leading level. This time, CISSOID and the Institute of Electrical Engineering of the Chinese Academy of Sciences will work together to develop high-quality systems based on silicon carbide power modules, and will use their respective advantages to form a powerful synergy to help China's new energy vehicle field achieve faster and better development.

"In 2018, the production and sales of new energy vehicles in China increased significantly, exceeding 1.25 million units. This has greatly promoted the development of China's silicon carbide power device market. In recent years, the Institute of Electrical Engineering of the Chinese Academy of Sciences has invested a lot of research and development in the field of new energy utilization , and new energy vehicles are a very important field. The system based on silicon carbide power modules developed in cooperation with CISSOID is a key step in promoting the development of new energy vehicles in China." Wen Xuhui, a researcher at the Institute of Electrical Engineering of the Chinese Academy of Sciences, said. "New energy vehicles have a strong demand for high-efficiency, small-size, high-temperature resistant silicon carbide devices and their driver devices. CISSOID's technology in high-temperature drivers and high-temperature packaging over the years can help silicon carbide devices achieve high temperature resistance and high energy density at the system level, and greatly improve the overall reliability of the electronic control system."

“The Institute of Electrical Engineering of the Chinese Academy of Sciences is a first-class research institution in China. Their research in the field of new energy vehicles is similar to ours.We hit it off immediately . We are looking forward to the research of both parties pushing the efficiency and energy density of silicon carbide power modules to new heights. CISSOID will use its proven and industry-renowned high-temperature driver chips and high-temperature packaging design team to provide strong support for this R&D cooperation, solve the technical difficulties in the application of silicon carbide devices, and enable silicon carbide power modules to be widely and deeply used in the field of new energy vehicles. " said Mr. Dave Hutton, CEO of CISSOID. "CISSOID attaches great importance to the development of China's new energy vehicle field, and also attaches great importance to the integration and development with China's semiconductor industry. We have already absorbed investment from China and started to cooperate extensively with Chinese companies in chip manufacturing, packaging and testing. This joint development with China's top research institutions further reflects CISSOID's strategy of seeking to be widely integrated into the Chinese semiconductor industry ecosystem. "

Market Research CompanyYole Development 's report points out that in the past few decades, factors such as market demand, technological progress and design improvements have been driving the average junction temperature of power semiconductors to rise continuously, from 100°C in 1980 to 150°C in 2018. This phenomenon shows that the quality and reliability of power devices are getting better and better, and on the other hand, it also reflects the industry's continuous pursuit of high power density. According to its report, the junction temperature requirements for power semiconductors will soon reach and exceed 175°C in the next few years. This is directly related to the popularity of third-generation semiconductor power devices (silicon carbide and gallium nitride) and the market's demand for high power density design. The same is true in the field of new energy vehicles . The use of silicon carbide devices can bring advantages such as high frequency and low internal resistance, and fully improve energy efficiency, but it requires good cooperation with high-temperature resistant drivers. The strong combination of CISSOID and the Institute of Electrical Engineering of the Chinese Academy of Sciences will use the industry's leading high-temperature resistant driver devices to give full play to the advantages of silicon carbide power devices and provide a strong boost to the development of new energy vehicles.