Field effect tube parameter symbol meaning-EEWORLD

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Cds---drain-source capacitance Cdu---drain-substrate capacitance Cgd---gate-source capacitance Cgs---drain-source capacitance Ciss---gate short-circuit common source input capacitance Coss---gate short-circuit common source output capacitance Crss---gate short-circuit common source reverse transfer capacitance D---duty cycle (duty factor, external circuit parameter) di/dt---current rise rate (external circuit parameter) dv/dt---voltage rise rate (external circuit parameter) ID---drain current (DC) IDM---drain pulse current ID(on)---on-state drain current IDQ---static drain current (RF power tube) IDS---drain-source current IDSM---maximum drain-source current IDSS---drain current when gate-source is short-circuited IDS(sat)---channel saturation current (drain-source saturation current) IG---gate current (DC) IGF---Forward gate currentIGR---Reverse gate currentIGDO ---Cut-off gate current when source is openIGSO ---Cut-off gate current when drain is openIGM---Gate pulse currentIGP ---Gate peak currentIF ---Diode forward currentIGSS ---Cut-off gate current when drain is short-circuitedIDSS1 ---Drain-source saturation current for the first tubeIDSS2 ---Drain-source saturation current for the second tubeIu ---Substrate currentIpr---Current pulse peak value (external circuit parameter) gfs---Forward transconductanceGp ---Power gainGps ---Common source neutralization and high-frequency power gainGpG ---Common gate neutralization and high-frequency power gainGPD ---Common drain neutralization and high-frequency power gainggd --- Gate-drain conductancegds---Drain-source conductanceK ---Offset voltage temperature coefficientKu ---Transmission coefficientL ---Load inductance (external circuit parameter) LD---drain inductance Ls---source inductance rDS---drain-source resistance rDS(on)---drain-source on-state resistance rDS(of)---drain-source off-state resistance rGD---gate-drain resistance rGS---gate-source resistance Rg---gate external resistance (external circuit parameter) RL---load resistance (external circuit parameter) R(th)jc---junction-to-case thermal resistance R(th)ja---junction-to-ring thermal resistance PD---drain power dissipation PDM---maximum allowable drain power dissipation PIN--input power POUT---output power PPK---pulse power peak value (external circuit parameter) to(on)---turn-on delay time td(off)---turn-off delay time ti---rise time ton--- turn-on time toff---turn-off time tf---fall time trr---reverse recovery time Tj---junction temperature Tjm---maximum allowable junction temperature Ta---ambient temperature Tc---case temperature Tstg---storage temperature VDS---drain-source voltage (DC) VGS---gate-source voltage (DC) VGSF--forward gate-source voltage (DC) VGSR---reverse gate-source voltage (DC) VDD---drain (DC) power supply voltage (external circuit parameter) VGG---gate (DC) power supply voltage (external circuit parameter) Vss---source (DC) power supply voltage (external circuit parameter) VGS(th)---turn-on voltage or valve voltage V(BR)DSS---drain-source breakdown voltage V(BR)GSS---gate-source breakdown voltage when drain-source is short-circuited VDS(on)---drain-source on-state voltage VDS(sat)---drain-source saturation voltage VGD---gate-drain voltage (DC) Vsu--- source-substrate voltage (DC) VDu---drain-substrate voltage (DC) VGu---gate-substrate voltage (DC) Zo---driving source internal resistance η---drain efficiency (RF power tube) Vn---noise voltage aID---drain current temperature coefficient ards---drain-source resistance temperature coefficient

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