The circuit shown in Figure 1 is a simple switch control circuit that connects Vsupply to the load. Vsupply can be a positive
voltage, a negative voltage, or an AC voltage. The input voltage amplitude is limited only by the maximum rating of the MOSFET's Vds. The VDS limit of the MOSFET Q1 and Q2 shown in the figure
is 50V. The circuit uses the MAX845 chip
.
The working voltage of the primary winding of the transformer and the driver IC is 5V. They generate an isolated
alternating voltage in the secondary winding of the transformer, which is rectified by D1 and D2 to generate a 10V VGS voltage for the N-channel MOSFET. The VGS generated in this way
is a constant isolation voltage and will not be affected by the change of the VDS voltage to ground. Since the negative VGS voltage applied to a single MOSFET
will still have current flowing through the MOSFET in the off state (caused by the internal parasitic diode in the forward biased state). Therefore,
the two MOSFET sources are connected to the source, so that their internal parasitic diodes are reversely connected, and no
current will flow under any circumstances.
After turning off the IC, the VGS of the MOSFET is 0V and the switch is disconnected (SD=5V, switch is disconnected, SD=0V, switch is closed).
The speed of the switch depends on the size of R1: a small R1 value can reduce the switching delay, but the corresponding power consumption is larger (when R1=1K, the load current
is 24 mA). If switching speed is not critical, a larger R1 value can be selected to reduce the power consumption current to 5 mA. Figure 2
shows the performance of the circuit under 40V, 1.2A load.
There are certain disadvantages to using other switching technologies, such as relays, whose switch contacts will vibrate and power consumption is also higher.
The maximum VGS rating of power MOSFET switches (about 20 volts for standard devices and about 15 volts for logic-level devices) makes it difficult
to withstand voltages exceeding 15 volts. Of course, it is also possible to level shift the gate voltage, but this will waste power, and
the larger resistance required for higher voltages will reduce switching speed.
Previous article:Basic knowledge of tantalum capacitors
Next article:DC switching power supply protection circuit
- Popular Resources
- Popular amplifiers
- 100 Examples of Microcontroller C Language Applications (with CD-ROM, 3rd Edition) (Wang Huiliang, Wang Dongfeng, Dong Guanqiang)
- A review of learning-based camera and lidar simulation methods for autonomous driving systems
- Design, production and debugging of flyback switching power supply (by Chen Yongzhen and Chen Zhibo)
- Internet of Things Development Technology Based on C Language (Edited by Gao Song)
- High signal-to-noise ratio MEMS microphone drives artificial intelligence interaction
- Advantages of using a differential-to-single-ended RF amplifier in a transmit signal chain design
- ON Semiconductor CEO Appears at Munich Electronica Show and Launches Treo Platform
- ON Semiconductor Launches Industry-Leading Analog and Mixed-Signal Platform
- Analog Devices ADAQ7767-1 μModule DAQ Solution for Rapid Development of Precision Data Acquisition Systems Now Available at Mouser
- Domestic high-precision, high-speed ADC chips are on the rise
- Microcontrollers that combine Hi-Fi, intelligence and USB multi-channel features – ushering in a new era of digital audio
- Using capacitive PGA, Naxin Micro launches high-precision multi-channel 24/16-bit Δ-Σ ADC
- Fully Differential Amplifier Provides High Voltage, Low Noise Signals for Precision Data Acquisition Signal Chain
- Innolux's intelligent steer-by-wire solution makes cars smarter and safer
- 8051 MCU - Parity Check
- How to efficiently balance the sensitivity of tactile sensing interfaces
- What should I do if the servo motor shakes? What causes the servo motor to shake quickly?
- 【Brushless Motor】Analysis of three-phase BLDC motor and sharing of two popular development boards
- Midea Industrial Technology's subsidiaries Clou Electronics and Hekang New Energy jointly appeared at the Munich Battery Energy Storage Exhibition and Solar Energy Exhibition
- Guoxin Sichen | Application of ferroelectric memory PB85RS2MC in power battery management, with a capacity of 2M
- Analysis of common faults of frequency converter
- In a head-on competition with Qualcomm, what kind of cockpit products has Intel come up with?
- Dalian Rongke's all-vanadium liquid flow battery energy storage equipment industrialization project has entered the sprint stage before production
- Allegro MicroSystems Introduces Advanced Magnetic and Inductive Position Sensing Solutions at Electronica 2024
- Car key in the left hand, liveness detection radar in the right hand, UWB is imperative for cars!
- After a decade of rapid development, domestic CIS has entered the market
- Aegis Dagger Battery + Thor EM-i Super Hybrid, Geely New Energy has thrown out two "king bombs"
- A brief discussion on functional safety - fault, error, and failure
- In the smart car 2.0 cycle, these core industry chains are facing major opportunities!
- The United States and Japan are developing new batteries. CATL faces challenges? How should China's new energy battery industry respond?
- Murata launches high-precision 6-axis inertial sensor for automobiles
- Ford patents pre-charge alarm to help save costs and respond to emergencies
- New real-time microcontroller system from Texas Instruments enables smarter processing in automotive and industrial applications
- Will it damage the phone or battery if I play games while charging my phone after it is fully charged?
- [NXP Rapid IoT Review] + Experience of using Rapid IOT Studio
- My goodness, what kind of electronic component is this?
- Record errors encountered in CCS
- How to choose TVS tube for MSP430FR2633 touch chip
- 【RPi PICO】 Pi calculation test
- A classic circuit sharing of 5V and 3.3V level conversion of IIC
- The sequel is here! Is it okay to have no reference? Let me explain it all at once!
- esp32
- Anti-interference problem of ws2812b light strip