4.3.1 DC bias circuit and static analysis
1. DC bias circuit
When the amplifier circuit is composed of field effect tubes, it is also necessary to establish a suitable static operating point Q. In addition, field effect tubes are voltage-controlled devices, so a suitable gate-source bias voltage is required. There are two commonly used DC bias circuits, namely self-bias circuits and voltage-dividing self-bias circuits.
1. Self-bias circuit
(a) (b)
Figure 1
The circuit shown in Figure 1(a) is a self-bias circuit, in which the gate of the field effect tube is grounded through a resistor Rg, and the source is grounded through a resistor R. This biasing method relies on the voltage generated by the drain current ID on the source resistor R to provide a bias voltage VGS between the gate and the source, so it is called a self-bias circuit. In static state, the source potential VS=IDR. Since the gate current is zero, there is no voltage drop on Rg, and the gate potential VG=0, so the gate-source bias voltage VGS= VG–VS= –IDR. Depletion-type MOS tubes can also use this form of bias circuit.
The circuit shown in Figure 1(b) is a special case of a self-bias circuit, where VGS = 0. Obviously, this bias circuit is only applicable to depletion-type MOS tubes, because within a certain range of gate-source voltage greater than zero, equal to zero, and less than zero, depletion-type MOS tubes can work normally.
The enhancement type MOS tube will only generate drain current ID when the gate-source voltage reaches its turn-on voltage VT, so this type of tube cannot be used in the self-bias circuit shown in Figure 1.
2. Voltage divider bias circuit
Figure 2
2. Static Analysis
Static analysis of field effect transistor amplifier circuits can also be done by graphical analysis or formula estimation. The steps of the graphical analysis are similar to those of the bipolar transistor amplifier circuit. Here we only discuss the use of the formula estimation method to find the static operating point.
When working in the saturation region, the drain current of the junction field effect transistor and the depletion mode MOS transistor , and the drain current of the enhancement mode MOS transistor .
When finding the static operating point, for the circuit shown in Figure 1(a), the equation group can be solved
Get ID and VGS.
Pipe pressure drop
For the circuit shown in Figure 2, the equation system can be solved
Get ID and VGS.
Tube voltage drop VDS = VDD – ID (Rd + R)
4.4.2 Small signal model analysis method for field effect transistors
1. Field Effect Transistor and Small Signal Model
The field effect transistor is also a nonlinear device. When the input signal voltage is very small and the field effect transistor works in the amplification area, it can be equivalent to a small signal model like the triode, as shown in the animation below.
When the field effect tube works under high frequency small signal conditions, the influence of its inter-electrode capacitance cannot be ignored. At this time, the field effect tube should be equivalent to the high frequency small signal model shown in the right figure.
2. Common Source Amplifier Circuit and Small Signal Model Analysis Method
Corresponding to the bipolar transistor amplifier circuit, the field effect tube amplifier circuit also has three basic configurations, namely the common source, common drain and common gate amplifier circuits. The steps of analyzing its amplifier circuit using the field effect tube small signal model are the same as those of the triode small signal model analysis method.
Common source Pole amplifier circuit As shown in Figure 1(a), the small-frequency signal equivalent circuit is obtained by continuously operating the first button in Figure 1.
1. Intermediate frequency voltage gain
The output resistance rd of the field effect tube is usually in the order of hundreds of kilo-ohms, which is much larger than the resistance Rd and RL. Therefore, rd can be treated as an open circuit.
The negative sign in the formula indicates that the output voltage of the common source amplifier circuit is opposite to the input voltage in phase, that is, the common source amplifier circuit belongs to the inverting voltage amplifier circuit.
2. Input resistance
Since the gate of the field effect tube hardly takes any signal current, the AC resistance between the gate and the source can be regarded as infinite. Therefore, the input resistance of the common source amplifier circuit shown in Figure 1 is
3. Output resistance
Applying the method of calculating the output resistance of the amplifier circuit introduced earlier, the output resistance of the circuit shown in Figure 1 can be obtained .
From the above analysis, we can see that, similar to the common emitter amplifier circuit, the common source amplifier circuit has a certain voltage amplification capability, and the output voltage is inverse to the input voltage, so it is called an inverting voltage amplifier. The input resistance of the common source amplifier circuit is very high, and the output resistance is mainly determined by the drain resistance Rd. It is suitable for the input stage or intermediate stage of a multi-stage amplifier circuit.
3. Common Drain Amplifier Circuit
The common drain amplifier circuit is shown in Figure 1(a), and the small-frequency signal equivalent circuit is shown in Figure 1(b). Since the output voltage is taken from the source, it is also called a source follower.
1. Intermediate frequency voltage gain
It can be seen from Figure 1(b) that
so
From this formula, we can know that the intermediate frequency voltage gain of the common drain amplifier circuit , the output voltage is in the same phase as the input voltage. When , , therefore, the common drain amplifier circuit is also called a source voltage follower.
2. Input resistance Ri
3. Output resistance Ro
By continuously operating the triangle button in Figure 1(b), we can obtain an equivalent circuit for calculating the output resistance of the common-drain amplifier circuit.
In this circuit, due to the gate current
That is, the output resistance Ro of the common drain circuit is equal to the source resistance R and the inverse of the transconductance in parallel, so the output resistance Ro is small. However, because gm is generally small, the output resistance of the common drain circuit is higher than that of the common collector circuit.
From the above analysis, we can know that, similar to the triode common collector amplifier circuit, the field effect tube common drain amplifier circuit has no voltage amplification function, its voltage gain is less than 1, the output voltage is in the same phase as the input voltage, the input resistance is high, and the output resistance is low. It can be used for impedance transformation.
Previous article:Comparison between field effect tube and BJT amplifier circuit
Next article:Metal-oxide-semiconductor field-effect transistor
- Popular Resources
- Popular amplifiers
- High signal-to-noise ratio MEMS microphone drives artificial intelligence interaction
- Advantages of using a differential-to-single-ended RF amplifier in a transmit signal chain design
- ON Semiconductor CEO Appears at Munich Electronica Show and Launches Treo Platform
- ON Semiconductor Launches Industry-Leading Analog and Mixed-Signal Platform
- Analog Devices ADAQ7767-1 μModule DAQ Solution for Rapid Development of Precision Data Acquisition Systems Now Available at Mouser
- Domestic high-precision, high-speed ADC chips are on the rise
- Microcontrollers that combine Hi-Fi, intelligence and USB multi-channel features – ushering in a new era of digital audio
- Using capacitive PGA, Naxin Micro launches high-precision multi-channel 24/16-bit Δ-Σ ADC
- Fully Differential Amplifier Provides High Voltage, Low Noise Signals for Precision Data Acquisition Signal Chain
- Innolux's intelligent steer-by-wire solution makes cars smarter and safer
- 8051 MCU - Parity Check
- How to efficiently balance the sensitivity of tactile sensing interfaces
- What should I do if the servo motor shakes? What causes the servo motor to shake quickly?
- 【Brushless Motor】Analysis of three-phase BLDC motor and sharing of two popular development boards
- Midea Industrial Technology's subsidiaries Clou Electronics and Hekang New Energy jointly appeared at the Munich Battery Energy Storage Exhibition and Solar Energy Exhibition
- Guoxin Sichen | Application of ferroelectric memory PB85RS2MC in power battery management, with a capacity of 2M
- Analysis of common faults of frequency converter
- In a head-on competition with Qualcomm, what kind of cockpit products has Intel come up with?
- Dalian Rongke's all-vanadium liquid flow battery energy storage equipment industrialization project has entered the sprint stage before production
- Allegro MicroSystems Introduces Advanced Magnetic and Inductive Position Sensing Solutions at Electronica 2024
- Car key in the left hand, liveness detection radar in the right hand, UWB is imperative for cars!
- After a decade of rapid development, domestic CIS has entered the market
- Aegis Dagger Battery + Thor EM-i Super Hybrid, Geely New Energy has thrown out two "king bombs"
- A brief discussion on functional safety - fault, error, and failure
- In the smart car 2.0 cycle, these core industry chains are facing major opportunities!
- The United States and Japan are developing new batteries. CATL faces challenges? How should China's new energy battery industry respond?
- Murata launches high-precision 6-axis inertial sensor for automobiles
- Ford patents pre-charge alarm to help save costs and respond to emergencies
- New real-time microcontroller system from Texas Instruments enables smarter processing in automotive and industrial applications
- What are the step-down chips that can reduce 18V to 12V and achieve an output power of at least 30W?
- Which is more resistant to interference: an equipotential signal or a signal with voltage bias?
- EEWORLD University Hall----Live Replay: TI DLP? Products Empower Industrial Light Control Field and Innovation
- Help with two solidification methods in micropython
- MSP430F5438A Series Serial Communication
- LPS22HH Threshold Interrupt
- Live presentation: Fujitsu FRAM and glasses-free 3D video technology
- [Submission Instructions] 2020-2021 ON Semiconductor and Avnet IoT Creative Design Competition
- Recruitment information of Beijing Chuangxin Micro Technology Co., Ltd.
- Wireless transmission network combining zigbee and GPRS