See the infinite possibilities in the field of gallium nitride!

Making GaN less mysterious, Tektronix and Innoscience work together to accelerate future technology

Beijing, China, April 22, 2022 - Tektronix, which has been focusing on third-generation semiconductor test solutions in recent years, has recently joined hands with Innoscience to develop the future of GaN applications. In the future, the two parties will work together to overcome a series of challenges such as faster switching speeds and higher switching frequencies of GaN, so that more excellent GaN products can enter more application fields in the future and charge for future technology together.

The entire power supply industry is currently undergoing profound changes. Wide bandgap semiconductor technologies represented by SiC (silicon carbide) and GaN (gallium nitride) have been widely used in many industries, and have also brought many challenges to the development and testing of power supplies. GaN devices have small gate charge and parasitic capacitance, which can achieve faster switching speeds and higher switching frequencies, but this also brings challenges to testing. On the one hand, the turn-on and turn-off speeds are faster, and the switching speed needs to be tested to the ps level, which requires the oscilloscope to have a higher bandwidth and common mode rejection ratio; on the other hand, the parasitic parameters of GaN itself are very small, and the connection of the test probe and the interference introduced by the probe capacitance will cause the measured waveform to be inaccurate or even damage the device, especially in the bridge drive upper tube test, the problem of accurate test of the drive signal is often encountered. Therefore, high bandwidth, high common mode rejection ratio, and small parasitic parameters are what need to be paid attention to when measuring GaN devices.

In recent years, Tektronix has been closely following the latest technological developments and developing targeted test solutions through close cooperation with industry leaders. Based on its unique optical isolation probes and oscilloscopes, Tektronix provides power engineers with excellent complete test solutions.

Founded in 2015 , Innoscience is an IDM company focusing on the research and development and manufacturing of silicon-based gallium nitride. It has taken the lead in establishing the world's first 8-inch silicon-based gallium nitride mass production line, mainly producing low-voltage gallium nitride of 30V-150V and high-voltage gallium nitride of 650V and above, which are used in 5G base stations, industrial Internet, data centers, autonomous driving, 5G communications, fast charging and other fields. It ranks among the top three in the global gallium nitride power manufacturer shipment rankings.

Through independent research and development, Innoscience has overcome the world-class difficulty of epitaxially growing gallium nitride single crystal materials on 8-inch silicon wafer substrates, and achieved large-scale mass production of 8-inch silicon-based gallium nitride epitaxy and chips for the first time, while filling the gap in this field in China. As a third-generation semiconductor material, gallium nitride has the characteristics of wide bandgap, high breakdown field strength, high electron mobility, and high electron saturation drift velocity. These characteristics make the gate charge and output capacitance of gallium nitride power devices smaller, without reverse recovery, and smaller on-resistance per unit area. This can achieve high frequency, high efficiency and high power density of the application system.

With its excellent physical properties, gallium nitride brings huge system advantages to industrial applications and has a very broad application prospect. With the maturity of large-scale production technology, gallium nitride will become the mainstream of future power semiconductors. In consumer electronics, data centers, 5G base stations, new energy vehicles and other fields, the demand for gallium nitride will usher in explosive growth. These application areas are also the focus of Tektronix's business in recent years. In the future, Tektronix Technology and Innoscience will jointly commit to the research and development and testing of the third-generation semiconductor silicon-based gallium nitride chips, work together to overcome a series of challenges of gallium nitride, and change the future with innovation and science.

As a leader in the test and measurement industry, Tektronix has always adhered to its advanced technology throughout the entire chain of third-generation semiconductor product development, production and application. In addition to assisting upstream manufacturers in designing and producing more reliable and high-quality power devices, Tektronix will also increase its efforts to help pioneers in the field of power device applications to maximize their performance to design better power products and work together to create unlimited possibilities in the field of gallium nitride!