Nexperia launches advanced 650 V silicon carbide diodes for demanding power conversion applications

Incorporating PIN Schottky structure results in greater robustness and efficiency

Nijmegen, April 20, 2023: Nexperia, the high-volume production specialist in basic semiconductor devices, today announced the launch of 650 V silicon carbide (SiC) Schottky diodes for power supplies requiring ultra-high performance, low losses and efficient power. application. The 10 A, 650 V SiC Schottky diode meets industrial-grade device standards to address the challenges of high-voltage and high-current applications, including switch-mode power supplies, AC-DC and DC-DC converters, battery charging infrastructure, and Intermittent power supplies and photovoltaic inverters, and improve continuous operating performance. For example, a data center equipped with a power supply designed with Nexperia PSC1065K SiC Schottky diodes will be more compliant with stringent energy efficiency standards than a data center using only silicon-based solutions.

Featuring temperature-independent capacitive switching and zero-recovery performance, the PSC1065K provides advanced performance with excellent quality factor (QC x VF). Its outstanding switching performance is virtually unaffected by changes in current and switching speed. The PSC1065K's Merged PIN Schottky (MPS) structure also provides other advantages, such as excellent surge current tolerance, eliminating the need for additional protection circuitry. These features significantly reduce system complexity, allowing hardware designers to achieve higher efficiency in a smaller form factor in rugged, high-power applications. As a supplier of a range of high-quality semiconductor technology products, Nexperia has a good reputation and is worthy of the trust of designers.

This SiC Schottky diode is available in a true 2-pin (R2P) TO-220-2 through-hole power plastic package . Additional packaging options include surface mount (DPAK R2P and D2PAK R2P) and through-hole (TO-247-2) packages in a true 2-pin configuration for enhanced reliability in high voltage applications up to 175°C.

Katrin Feurle, senior director of the SiC product group at Nexperia, said: “We are very proud that the high-performance SiC Schottky diodes we offer excel among currently available solutions. As people become more energy-conscious, we are We are committed to bringing more choices and convenience to the market to meet the significantly increased market demand for high-capacity, high-efficiency applications.”

Nexperia plans to continuously increase its SiC diode product portfolio to include automotive grade devices with operating voltages of 650 V and 1200 V and current ranges of 6-20 A. Samples of the new SiC diodes are now available and mass production will begin in the near future.