ON Semiconductor to Demonstrate Energy Efficient Solutions at PCIM Europe 2022

USB-C Power Bundle, 7th Generation 1200 V IGBTs and Diodes, and First TOLL-Packaged 650 V Silicon Carbide (SiC) MOSFETs Simplify Design of Energy-Efficient Power Solutions

April 27, 2022 - ON Semiconductor, a leader in smart power and smart sensing technologies, will launch a series of new power solutions at PCIM Europe, which will be held in Nuremberg, Germany from May 10 to 12, 2022.

ON Semiconductor's booth at PCIM Europe will present live demonstrations of the latest technologies, showing how these technologies enable the development of market-leading electric vehicles, energy storage, smart power solutions, etc. Among the exciting demonstrations are a Student Formula E car and an electric motorcycle jointly developed with the Technical University Munich. In addition, ON Semiconductor will also exhibit a physical electric vehicle charger from Kempower, which uses ON Semiconductor's SiC diodes, and a warehouse robot with ecoSpin.

“We are excited to return to PCIM Europe to showcase our broad range of products that solve the latest challenges in energy infrastructure, communications and electric vehicles,” said Felicity Carson, Chief Marketing Officer at ON Semiconductor. “We are working with our partners and customers to further demonstrate new, real-world applications for our technology.”

ON Semiconductor will release a new power bundle for USB-C Power Delivery (USB-C PD) charging above 100 W, using NCP1623, NCP1345 and NCP4307, which are part of the very successful critical conduction mode power factor correction (PFC), high frequency quasi-resonant (QR) and synchronous rectifier controller series. The release of the new USB-C controller will further expand the USB-C product series.

ON Semiconductor, one of the leading companies in the field of silicon carbide (SiC), will launch a variety of new SiC power switching devices with better performance than previous generations. The first TOLL packaged 650 V, 33 mΩ SiC MOSFET, NTBL045N065SC1, has a smaller footprint than the D2PAK 7lead, with less space and lower package inductance . The first TOLL packaged 650 V, 33 mΩ SiC MOSFET offers a Kelvin source configuration to improve switching losses and gate noise, and guarantees moisture sensitivity level 1 (MSL1). SiC devices have significant advantages over previous generation silicon devices, including higher energy efficiency at high frequencies, lower electromagnetic interference (EMI), higher operating temperature tolerance and higher reliability. ON Semiconductor is the only supplier with vertical integration capabilities for SiC solutions, including SiC ingot growth, substrates, epitaxy, device manufacturing, best-in-class integrated modules and discrete packaging solutions.

Finally, ON Semiconductor will also showcase its 7th generation IGBTs and diodes for the first time . The latest 1200 V FS7 IGBT has a 20% reduction in forward bias voltage compared to the previous generation, greatly improving the energy efficiency and power density of motor control applications. The company will also launch a fast version of the FS7 IGBT for medium and high switching frequency applications such as solar energy, uninterruptible power supplies (UPS) and energy storage, with a 50% reduction in switching losses. The FS7 product portfolio has been further expanded, including the launch of 750 V and 1200 V VE-TracTM Direct automotive-compliant solutions, which have excellent robustness, soft switching and high energy efficiency to meet the main drive needs of today's electric vehicles.

ON Semiconductor technical staff will deliver multiple keynote speeches at PCIM Europe, including SiC Technology in the Poster Session, Power Electronics Technology in the Industry Forum, Electric Vehicle Forum and Exhibitor Forum.