Toshiba Launches 150V N-Channel Power MOSFET Using Latest Generation Process

Toshiba Launches 150V N-channel Power MOSFET Using Latest-Generation Process to Significantly Improve Power Supply Efficiency

Shanghai, China, March 31, 2022 – Toshiba Electronic Devices & Storage Corporation (“Toshiba”) today announced the launch of the “ TPH9R00CQH ”, a 150V N-channel power MOSFET. The device adopts the latest generation[1] “U-MOSX-H” process and is suitable for switching power supplies for industrial equipment, including data center power supplies and communication base station power supplies. The product is available for mass shipment starting today.

Compared to the 150V TPH1500CNH using the current generation "U-MOSⅧ-H" process, the TPH9R00CQH has a drain-source on-resistance reduction of approximately 42%. Optimization of the structure of the new MOSFET facilitates the balance between the source-drain on-resistance and the two charge characteristics[2][3], thereby achieving excellent low-loss characteristics . In addition, the peak voltage between the drain and source during switching operation is reduced, which helps reduce electromagnetic interference (EMI) in the switching power supply. The product is available in two types of surface mount packages: SOP Advance and the more widely adopted SOP Advance (N).

At the same time, Toshiba also provides a variety of tools to support the circuit design of switching power supplies. In addition to the G0 SPICE model that can quickly verify circuit functions, it now also provides a high-precision G2 SPICE model that can accurately reproduce transient characteristics.

Toshiba will further expand its MOSFET product line to help reduce power consumption by improving equipment power efficiency by reducing losses.

application:

-Communication equipment power supply

-Switching power supplies (high-efficiency DC-DC converters, etc.)

characteristic:

-Excellent low-loss characteristics (balance between on-resistance and gate switching charge and output charge)

-Excellent on-resistance: RDS(ON)＝9.0mΩ（max）@VGS＝10V

-High rated junction temperature: Tch (max) = 175°C

Key specifications:

(Unless otherwise specified, @Ta＝25℃)

Note:

[1] Toshiba survey as of March 2022.

[2] Gate switching charge and output charge.

[3] Compared to the existing product TPH1500CNH (U-MOSⅧ-H series), this product improves drain-source on-resistance × gate switch charge by approximately 20% and drain-source on-resistance × output charge by approximately 28%.

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*The product prices and specifications, service content and contact information in this document are the latest information on the date of announcement, but are subject to change without prior notice.