Basic knowledge of circuits (IV) Chinese semiconductor device model naming method

The semiconductor device model consists of five parts (field effect devices, special semiconductor devices, composite tubes, PIN tubes, and laser devices only have the third, fourth, and fifth parts). The meanings of the five parts are as follows:

Part 1: Use numbers to represent the number of effective electrodes of semiconductor devices. 2-diode, 3-transistor

Part 2: Use Chinese phonetic letters to indicate the materials and polarity of semiconductor devices. When indicating diodes: AN type germanium material, BP type germanium material, CN type silicon material, DP type silicon material. When indicating triodes: A-PNP type germanium material, B-NPN type germanium material, C-PNP type silicon material, D-NPN type silicon material.

Part III: Use Chinese phonetic letters to indicate the internal type of semiconductor devices. P-ordinary tube, V-microwave tube, W-voltage regulator tube, C-parameter tube, Z-rectifier tube, L-rectifier stack, S-tunnel tube, N-damping tube, U-photoelectric device, K-switching tube, X-low frequency low power tube (F3MHz, Pc1W), A-high frequency high power tube (f>3MHz, Pc>1W), T-semiconductor thyristor (controlled rectifier), Y-body effect device, B-avalanche tube, J-step recovery tube, CS-field effect tube, BT-semiconductor special device, FH-composite tube, PIN-PIN type tube, JG-laser device.

Part 4: Using numbers to represent serial numbers

Part 5: Specification numbers expressed in Chinese phonetic letters

For example: 3DG18 represents an NPN type silicon high frequency transistor

Japanese semiconductor discrete device model naming method

2. Semiconductor discrete devices produced in Japan are composed of five to seven parts. Usually only the first five parts are used, and the symbols of each part have the following meanings:

Part 1: Use numbers to indicate the number or type of effective electrodes of the device. 0-photoelectric (i.e. photosensitive) diode, triode and combination of the above devices, 1-diode, 2-triode or other devices with two pn junctions, 3-other devices with four effective electrodes or three pn junctions, ┄┄ and so on.

Part 2: Japan Electronics Industries Association (JEIA) registration mark. S- indicates a semiconductor discrete device that has been registered with the Japan Electronics Industries Association (JEIA).

Part 3: Use letters to indicate the polarity and type of the materials used in the device. A-PNP high-frequency tube, B-PNP low-frequency tube, C-NPN high-frequency tube, D-NPN low-frequency tube, FP control electrode thyristor, GN control electrode thyristor, HN base unijunction transistor, JP channel field effect tube, KN channel field effect tube, M-bidirectional thyristor.

Part 4: The serial number registered with the Japan Electronics Industry Association (JEIA) is represented by a number. An integer with two or more digits, starting from "11", represents the serial number registered with the Japan Electronics Industry Association (JEIA); devices with the same performance from different companies can use the same serial number; the larger the number, the more recent the product.

Part 5: Letters are used to indicate the improved product mark of the same model. A, B, C, D, E, F indicate that this device is an improved product of the original model.

American semiconductor discrete device model naming method

3. The naming of transistors or other semiconductor devices in the United States is rather confusing. The naming method of semiconductor discrete devices of the American Electronics Industry Association is as follows:

Part 1: Use symbols to indicate the type of device usage. JAN-military grade, JANTX-special military grade, JANTXV-super special military grade, JANS-aerospace grade, (none)-non-military products.

Part 2: Use numbers to represent the number of pn junctions. 1-diode, 2=transistor, 3-three pn junction devices, n pn junction devices.

Part 3: Registration mark of the American Electronic Industries Association (EIA). N-This device has been registered with the American Electronic Industries Association (EIA).

Part 4: American Electronics Industry Association registration serial number. Multi-digit number - the serial number of the device registered with the American Electronics Industry Association.

Part 5: Use letters to indicate the device classification. A, B, C, D, ┄┄-different grades of the same model device. For example: JAN2N3251A means PNP silicon high-frequency low-power switch transistor, JAN-military grade, 2-transistor, N-EIA registration mark, 3251-EIA registration sequence number, A-2N3251A grade.

4. International Electronics Federation semiconductor device model naming method

Most European countries such as Germany, France, Italy, the Netherlands, Belgium, and Eastern European countries such as Hungary, Romania, Yugoslavia, and Poland adopt the International Electronics Federation semiconductor discrete device model naming method. This naming method consists of four basic parts, and the symbols and meanings of each part are as follows:

Part 1: Letters are used to indicate the materials used in the device. A-The bandgap width of the device material is Eg = 0.6~1.0eV, such as germanium, B-The device uses the material Eg = 1.0~1.3eV, such as silicon, C-The device uses the material Eg>1.3eV, such as gallium arsenide, D-The device uses the material Eg <0.6eV, such as indium antimonide, E-The device uses composite materials and materials used in photovoltaic cells

Part 2: Use letters to indicate the type and main features of the device. A-detection switch mixer diode, B-variable capacitance diode, C- low-frequency low-power transistor, D-low-frequency high-power transistor, E-tunnel diode, F-high-frequency low-power transistor, G-composite devices and other devices, H-magnetic sensitive diode, K-Hall element in open magnetic circuit, L-high-frequency high-power transistor, M-Hall element in closed magnetic circuit, P-photosensitive device, Q-light-emitting device, R-low-power thyristor, S-low-power switch tube, T-high-power thyristor, U-high-power switch tube, X-multiplier diode, Y-rectifier diode, Z-voltage regulator diode.

Part 3: Use numbers or letters plus numbers to indicate the registration number. Three digits represent the registration number of general-purpose semiconductor devices, and one letter plus two digits represent the registration number of special-purpose semiconductor devices.

Part 4: Use letters to classify devices of the same type. A, B, C, D, E┄┄-Indicates that devices of the same model are classified according to a certain parameter.

In addition to the four basic parts, suffixes are sometimes added to distinguish characteristics or further classify. Common suffixes are as follows:

1. The suffix of the Zener diode model. The first part of the suffix is ​​a letter, indicating the allowable error range of the stable voltage value. The letters A, B, C, D, and E represent the allowable errors of ±1%, ±2%, ±5%, ±10%, and ±15% respectively; the second part of the suffix is ​​a number, indicating the integer value of the nominal stable voltage; the third part of the suffix is ​​the letter V, representing the decimal point, and the number after the letter V is the decimal value of the nominal stable voltage of the Zener diode.

2. The suffix of the rectifier diode is a number, which indicates the maximum reverse peak withstand voltage of the device, in volts.

3. The suffix of the thyristor model is also a number, which usually indicates the smaller voltage value between the maximum reverse peak withstand voltage and the maximum reverse turn-off voltage.

For example: BDX51- represents NPN silicon low-frequency high-power transistor, AF239S- represents PNP germanium high-frequency low-power transistor.

5. European early semiconductor discrete device model nomenclature

Some European countries, such as Germany and the Netherlands, use the following naming method.

Part 1: O- indicates semiconductor devices

Part 2: A-diode, C-transistor, AP-photodiode, CP-phototransistor, AZ-zener diode, RP-photoelectric device.

Part 3: Multi-digit number - indicates the registration serial number of the device.

The fourth part: A, B, C┄┄-indicates variant products of the same model device.

The Russian semiconductor device model nomenclature is not introduced here because it is rarely used.