POWER MOSFET drive circuit application examples

1. Main parameters and characteristics

MOSFET is a voltage- controlled device. The input gate voltage VG controls the drain current ID, that is, under certain conditions, the drain current ID depends on the gate voltage VG. The limit parameters are: maximum drain-source voltage VDS, maximum gate-source voltage VGS, maximum drain current ID, and maximum power consumption PD. The limit values ​​cannot be exceeded during use, otherwise the device will be damaged. The main electrical characteristics are: turn-on voltage VGS (Th); IDSS current when the gate voltage is zero; on-resistance RDS (ON) under certain VGS conditions.

2. Based on Switching power supply IC3843 drive Circuit

HS70N06VGS can be fully turned on at 3.1V, and has a very low on-resistance RDS(ON). ICs with internal totem pole drive circuits such as 3843 can generally drive it easily. The selection range of gate resistance is also relatively large, generally ranging from a few ohms to hundreds of ohms.

3. Based on MCU totem drive circuit

The working voltage of MCU is relatively low (generally below 5.5V), which cannot directly drive HS80N75 or the driving capability is very poor. Therefore, we usually choose to add an external totem driving circuit.

4. Based on inverter output drive circuit

5. Based on HID ballast Full bridge Driver Circuit

6. Based on DCBL motor drive circuit

In this power-on mode, three MOSFETs are powered on at every moment. The phase is switched every 60 degrees, and one MOSFET is switched each time, and each MOSFET is powered on for 180 degrees.