Basic principles of LED epitaxial wafer growth-EEWORLD

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Basic principles of LED epitaxial wafer growth

The basic principle of LED epitaxial wafer growth is that on a substrate substrate (mainly ruby and SiC) heated to an appropriate temperature, gaseous substances In, Ga, Al, and P are controlled to be transported to the substrate surface to grow a specific single crystal film. Currently, the LED epitaxial wafer growth technology mainly uses the organic metal chemical vapor deposition method.

Metal Organic Chemical Vapor Deposition (MOCVD)

Metal-Organic Chemical Vapor Deposition (MOCVD) is a new technology for preparing single compound semiconductor thin films proposed by Rockwell Corporation in the United States in 1968. The equipment integrates precision machinery, semiconductor materials, vacuum electronics, fluid mechanics, optics, chemistry, and computers. It is a high-level, expensive, and highly integrated cutting-edge optoelectronic equipment. It is mainly used for the epitaxial growth of GaN (gallium nitride) semiconductor materials and the manufacture of blue, green or ultraviolet light-emitting diode chips. It is also one of the most promising special equipment in the optoelectronics industry.

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