S-type digital source meter to build semiconductor Hall effect test experiment

The Hall effect of semiconductor materials is an important means of characterizing and analyzing semiconductor materials. The conductivity type of the material can be determined based on the sign of the Hall coefficient. The Hall effect is essentially the deflection of moving charged particles in a magnetic field caused by the Lorentz force. When charged particles (electrons or holes) are confined in solid materials, this deflection leads to the accumulation of positive and negative charges in the direction perpendicular to the current and magnetic field, forming an additional transverse electric field.

According to the Hall coefficient and its relationship with temperature, the carrier concentration and the relationship between carrier concentration and temperature can be calculated, thereby determining the band gap width and impurity ionization energy of the material; the carrier mobility can be determined by the joint measurement of the Hall coefficient and resistivity, and the longitudinal carrier concentration distribution can be measured by the differential Hall effect method; the impurity compensation degree can be determined by measuring the low-temperature Hall effect. Unlike other tests, the Hall parameter test has many test points, cumbersome connections, large calculations, and requires external temperature and magnetic field environments. Under this premise, manual testing is impossible to complete.

The Hall effect test system developed by Pusai Instrument can realize multi-parameter automatic switching measurement from thousands to tens of thousands of points. The system consists of S series domestic source meter, 2700 matrix switch and S type test software. The resistivity, Hall coefficient, carrier concentration and Hall mobility can be calculated according to the test results under different magnetic fields, temperatures and currents, and the curves can be drawn. In the wafer substrate and ion implantation stages of the semiconductor process, or the packaged Hall device needs to be tested for the Hall effect.

Parameters to be tested:

Resistivity

Hall coefficient

Carrier concentration

Hall mobility characteristic curve

Vanderbilt Act