Rohm won the "Best Application Award" of the 21IC "18th TOP-10 Power Product Award"
On November 6, 2020, the "19th Power Technology Seminar" hosted by 21IC China Electronics Network was held in Beijing. At the seminar, the "18th TOP-10 Power Product Award" and its four individual awards were announced. The four individual awards are "Technology Breakthrough Award", "Best Application Award", "Optimization Development Award" and "Green Energy Saving Award". Based on the product's outstanding performance in cost-effectiveness and grasping market hotspots, Rohm won the "Best Application Award" for its "1200V 4th Generation SiC MOSFET" .
In recent years, the further popularization of the next generation of electric vehicles (xEV) has promoted the development of more efficient, smaller and lighter electric systems. In particular, the miniaturization and efficiency of the host inverter system, which plays a core role in driving, has become one of the important issues, which requires further improvement of power components. In addition, in the field of electric vehicles (EV), the capacity of on-board batteries is increasing to extend the driving range. At the same time, the charging time is required to be shortened, and the battery voltage is also getting higher and higher (800V). In order to solve these issues, SiC power components that can achieve high withstand voltage and low loss are highly expected.
For power semiconductors, when the on-resistance decreases, the short-circuit withstand time will be shortened. There is a contradictory trade-off between the two. Therefore, when reducing the on-resistance of SiC MOSFET, how to take into account the short-circuit withstand time has always been a challenge.
The 1200V 4th generation SiC MOSFET has improved the contradictory trade-off between low on-resistance and high-speed switching performance by further improving ROHM's unique dual trench structure. Compared with previous products, it has successfully reduced the on-resistance per unit area by about 40% without sacrificing short-circuit withstand time. In addition, by significantly reducing parasitic capacitance (a topic during the switching process), it has successfully reduced switching losses by about 50% compared to previous products. Therefore, the use of the 4th generation SiC MOSFET with both will be very helpful in significantly reducing the size and further reducing the power consumption of many applications such as automotive inverters and various switching power supplies.
This product has been available for sampling in the form of bare chips since June 2020, and is planned to be available in discrete packages in the future.
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The TOP-10 Power Supply Award is one of the industry benchmarks recognized by the Chinese power supply industry. It is selected based on a comprehensive evaluation of multiple technical indicators including technology, application, design, innovation, and energy efficiency. 21IC China Electronics Network has held the TOP-10 Power Supply Award for 18 consecutive years. The large number of participating manufacturers and the wide range of participating product categories make it an excellent display platform for today's power supply technology.
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