The key figure in TSMC's overtaking of Intel, Fudan top student becomes a Taiwanese citizen
Latest update time：2021-08-31 05:19
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Recently, the Ministry of the Interior of Taiwan, China announced the review results of the naturalization review committee for senior professionals. American citizen Cao Min passed the review and became a naturalized Taiwanese, which attracted attention from all walks of life.
It is reported that Cao Min graduated from the Department of Electronic Engineering of Fudan University in Shanghai, and then went to the United States to study, where he obtained a Ph.D. in Physics from Stanford University.
Taiwan's report pointed out that American Cao Min specializes in semiconductor R&D and design, and has led the Taiwan Semiconductor Manufacturing Co., Ltd. team to develop 20-nanometer and 10-nanometer process technologies. Most notably, he led a 1,400-person team at TSMC to conduct cross-departmental cooperation. After three years of persistent efforts, he broke through high-dielectric material/metal gate technology and innovatively adopted double exposure technology to successfully develop 20-nanometer process technology.
Another key technology for the smooth production of 20nm is double patterning technology, which is also the first time TSMC has adopted this technology. Cao Min's team has developed intelligent pattern disassembly technology and innovative multi-layer etching protection film, which can overcome the limitations of mask alignment problems and enable the double exposure and double etching process to meet the requirements of controllable mass production. Cao Min emphasized, "In the field of double patterning, TSMC has a lot of innovations. We are the only one in the industry that can successfully use it, far ahead of our competitors."
This achievement has enabled TSMC's wafer density to surpass that of global chip giant Intel, significantly increasing its technological lead internationally, enhancing TSMC's competitiveness, and ensuring its leading position in the wafer foundry field. In 2013, it won the Ministry of Economic Affairs' Industrial Innovation Award for the annual innovation breakthrough award.
According to TSMC's official website, Dr. Cao Min has served as TSMC's Vice President of Technology Development Pathfinding since February 2018. Prior to this, Dr. Cao Min served as Senior Director of Pathfinding since 2016. Dr. Cao Min joined TSMC in 2002 and successfully assisted in the development of a number of advanced complementary metal oxide semiconductor (CMOS) process technologies, including 90nm, 65nm, 40nm, 28nm, 20nm and 10nm.
From 2006 to 2008, Dr. Cao Min led the development of 40nm general-purpose process technology, which was also TSMC's first nanometer process using ultra-dense miniaturization. In 2009, he successfully led the development of 28nm high-performance process using high-k metal gate (HKMG) technology for the first time. Dr. Cao Min later led the R&D team to develop 20nm and 10nm process technologies.
Prior to joining TSMC, Dr. Tsao worked at Hewlett-Packard Laboratories from 1994 to 1999, PDF Solutions from 1999 to 2000, and Pericom Semiconductor from 2000 to 2002.
Dr. Cao Min holds 36 patents in the field of integrated circuit technology. Dr. Cao has served in many committees, including the International Electron Components Meeting (IEDM) and the International VLSI Technology and Circuit Symposium. Dr. Cao Min graduated from the Department of Electronic Engineering of Fudan University in Shanghai, received a master's degree in physics from San Francisco State University, and received a doctorate in physics from Stanford University in the United States.
Currently, Cao Min serves as the Vice President of Research and Development/Technology Development/Pathfinding. Next, how TSMC will develop its technology blueprint after 3nm and whether it will use new methods to increase value will depend on his research.
*Disclaimer: This article is originally written by the author. The content of the article is the author's personal opinion. Semiconductor Industry Observer reprints it only to convey a different point of view. It does not mean that Semiconductor Industry Observer agrees or supports this point of view. If you have any objections, please contact Semiconductor Industry Observer.
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