ST launches fourth-generation SiC MOSFET

Latest update time：2024-09-26

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Source: Content compiled from eenews, thank you.

STMicroelectronics has launched its fourth-generation STPOWER silicon carbide (SiC) MOSFET technology, setting new benchmarks in power efficiency, power density and robustness.

The new technology not only meets the needs of the automotive and industrial markets, but is also specifically optimized for traction inverters, a key component of electric vehicle (EV) powertrains. The company plans to launch more advanced SiC technology innovations by 2027 to continue its commitment to innovation.

与前几代产品相比，第四代 MOSFET 的导通电阻（RDS(on)）显著降低，从而最大程度地降低了传导损耗，并提高了整体系统效率。它们提供更快的开关速度，从而降低开关损耗，这对于高频应用至关重要，并可实现更紧凑、更高效的电源转换器。第四代技术在动态反向偏置 (DRB) 条件下提供了额外的稳健性，超过了 AQG324 汽车标准，确保在恶劣条件下可靠运行。

The fourth generation products continue to offer an excellent RDS(on) x chip area performance factor to ensure high current handling capability and minimal losses. The average chip size of the fourth generation devices is 12-15% smaller than the third generation devices, based on RDS(on) at 25 degrees Celsius, enabling more compact power converter designs, saving valuable space and reducing system costs.

新的 SiC MOSFET 器件将提供 750 V 和 1200 V 两种电压等级，可提高 400 V 和 800 V 电动汽车公交车牵引逆变器的能效和性能，将 SiC 的优势带入中型和紧凑型电动汽车——这是实现大众市场采用的关键领域。新一代 SiC 技术还适用于各种高功率工业应用，包括太阳能逆变器、储能解决方案和数据中心，可显著提高这些日益增长的应用的能效。

ST has completed qualification of the 750V class of its fourth-generation SiC technology platform and expects to complete qualification of the 1200V class in the first quarter of 2025. Devices with nominal voltages of 750V and 1200V will subsequently become commercially available, enabling designers to address applications ranging from standard AC line voltages to high-voltage electric vehicle batteries and chargers.

Compared with silicon-based products, ST's fourth-generation SiC MOSFETs are more efficient, smaller, lighter, and have a longer driving range. These advantages are critical to the widespread adoption of electric vehicles, and leading electric vehicle manufacturers are working with ST to introduce fourth-generation SiC technology into their vehicles to improve performance and energy efficiency.

Although the main application of the fourth-generation SiC MOSFET is electric vehicle traction inverters, it is also suitable for high-power industrial motor drives due to the device's improved switching performance and robustness. This can achieve more efficient and reliable motor control, reducing energy consumption and operating costs in industrial environments.

In renewable energy applications, the fourth-generation SiC MOSFET improves the efficiency of solar inverters and energy storage systems, helping to achieve more sustainable and cost-effective energy solutions. In addition, these SiC MOSFETs can be used in power supply units in AI server data centers, where their high efficiency and compact size are critical to the huge power requirements and thermal management challenges.

In order to accelerate the development of SiC power devices through a vertically integrated manufacturing strategy, ST is simultaneously developing multiple SiC technology innovations to drive the development of power device technology over the next three years. ST's fifth-generation SiC power devices will use innovative high-power density technology based on a planar structure. Compared with existing SiC technology, ST is also developing a fundamental innovation that is expected to achieve excellent on-resistance RDS(on) values at high temperatures and further reduce RDS(on).

“STMicroelectronics is committed to driving the future of electric vehicles and industrial efficiency through our cutting-edge silicon carbide technology. We continue to advance SiC MOSFET technology through innovations in devices, advanced packaging, and power modules,” said Marco Cassis, President of the Analog, Power and Discrete, MEMS and Sensors Division. “Combined with our vertically integrated manufacturing strategy, we are delivering industry-leading SiC technology performance and a resilient supply chain to meet the growing needs of our customers and contribute to a more sustainable future.”

STMicroelectronics, the market leader in SiC power MOSFETs, is further driving innovation to exploit SiC’s higher efficiency and greater power density relative to silicon devices. The latest generation of SiC devices is designed to benefit future electric vehicle traction inverter platforms, with further improvements in size and energy savings potential. While the electric vehicle market continues to grow, achieving widespread adoption remains challenging, as automakers seek to make electric vehicles more affordable. The SiC-based 800V EV bus drive system enables faster charging and reduces the weight of electric vehicles, allowing automakers to produce high-end models with longer driving range.

Reference Links

https://www.eenewseurope.com/en/sic-power-technology-for-next-generation-evs/

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