EDS6432AFBH datasheet, PDF - EEWORLD Datasheet

EDS6432AFBH: Description64M bits SDRAM (2M words x 32 bits); File Size600KB，49 Pages; ManufacturerELPIDA; Websitehttp://www.elpida.com/en

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EDS6432AFBH Overview

64M bits SDRAM (2M words x 32 bits)

EDS6432AFBH Related Products

	EDS6432AFBH	EDS6432AFBH-6B-E	EDS6432AFBH-75-E	EDS6432CFBH	EDS6432CFBH-75-E
Description	64M bits SDRAM (2M words x 32 bits)	64M bits SDRAM (2M words x 32 bits)	64M bits SDRAM (2M words x 32 bits)	64M bits SDRAM (2M words x 32 bits)	64M bits SDRAM (2M words x 32 bits)
Is it Rohs certified?	-	conform to	conform to	-	conform to
Maker	-	ELPIDA	ELPIDA	-	ELPIDA
Parts packaging code	-	BGA	BGA	-	BGA
package instruction	-	TFBGA, BGA90,9X15,32	TFBGA, BGA90,9X15,32	-	TFBGA, BGA90,9X15,32
Contacts	-	90	90	-	90
Reach Compliance Code	-	unknow	unknow	-	unknow
ECCN code	-	EAR99	EAR99	-	EAR99
access mode	-	FOUR BANK PAGE BURST	FOUR BANK PAGE BURST	-	FOUR BANK PAGE BURST
Maximum access time	-	5.4 ns	5.4 ns	-	5.4 ns
Other features	-	AUTO/SELF REFRESH	AUTO/SELF REFRESH	-	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	-	166 MHz	133 MHz	-	133 MHz
I/O type	-	COMMON	COMMON	-	COMMON
interleaved burst length	-	1,2,4,8	1,2,4,8	-	1,2,4,8
JESD-30 code	-	R-PBGA-B90	R-PBGA-B90	-	R-PBGA-B90
length	-	13 mm	13 mm	-	13 mm
memory density	-	67108864 bi	67108864 bi	-	67108864 bi
Memory IC Type	-	SYNCHRONOUS DRAM	SYNCHRONOUS DRAM	-	SYNCHRONOUS DRAM
memory width	-	32	32	-	32
Number of functions	-	1	1	-	1
Number of ports	-	1	1	-	1
Number of terminals	-	90	90	-	90
word count	-	2097152 words	2097152 words	-	2097152 words
character code	-	2000000	2000000	-	2000000
Operating mode	-	SYNCHRONOUS	SYNCHRONOUS	-	SYNCHRONOUS
Maximum operating temperature	-	70 °C	70 °C	-	70 °C
organize	-	2MX32	2MX32	-	2MX32
Output characteristics	-	3-STATE	3-STATE	-	3-STATE
Package body material	-	PLASTIC/EPOXY	PLASTIC/EPOXY	-	PLASTIC/EPOXY
encapsulated code	-	TFBGA	TFBGA	-	TFBGA
Encapsulate equivalent code	-	BGA90,9X15,32	BGA90,9X15,32	-	BGA90,9X15,32
Package shape	-	RECTANGULAR	RECTANGULAR	-	RECTANGULAR
Package form	-	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	-	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	-	260	260	-	260
power supply	-	3.3 V	3.3 V	-	3.3 V
Certification status	-	Not Qualified	Not Qualified	-	Not Qualified
refresh cycle	-	4096	4096	-	4096
Maximum seat height	-	1.14 mm	1.14 mm	-	1.14 mm
self refresh	-	YES	YES	-	YES
Continuous burst length	-	1,2,4,8,FP	1,2,4,8,FP	-	1,2,4,8,FP
Maximum standby current	-	0.002 A	0.002 A	-	0.002 A
Maximum slew rate	-	0.26 mA	0.22 mA	-	0.22 mA
Maximum supply voltage (Vsup)	-	3.6 V	3.6 V	-	2.7 V
Minimum supply voltage (Vsup)	-	3 V	3 V	-	2.3 V
Nominal supply voltage (Vsup)	-	3.3 V	3.3 V	-	2.5 V
surface mount	-	YES	YES	-	YES
technology	-	CMOS	CMOS	-	CMOS
Temperature level	-	COMMERCIAL	COMMERCIAL	-	COMMERCIAL
Terminal form	-	BALL	BALL	-	BALL
Terminal pitch	-	0.8 mm	0.8 mm	-	0.8 mm
Terminal location	-	BOTTOM	BOTTOM	-	BOTTOM
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED
width	-	8 mm	8 mm	-	8 mm

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