datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Passive components> oscillator> SIT9025AER72R18EP1.000000
PDF
Preview

SIT9025AER72R18EP1.000000

Description
LVCMOS Output Clock Oscillator, 1MHz Nom,
CategoryPassive components    oscillator   
File Size866KB，14 Pages
ManufacturerSiTime
Environmental Compliance
Download Datasheet Parametric View All

SIT9025AER72R18EP1.000000 Overview

LVCMOS Output Clock Oscillator, 1MHz Nom,

SIT9025AER72R18EP1.000000 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid145228711117
Reach Compliance Codeunknown
Country Of OriginMalaysia, Taiwan, Thailand
YTEOL6.64
Other featuresOUTPUT ENABLE FUNCTION
maximum descent time4.31 ns
Frequency Adjustment - MechanicalNO
frequency stability25%
JESD-609 codee4
Installation featuresSURFACE MOUNT
Number of terminals4
Nominal operating frequency1 MHz
Maximum operating temperature105 °C
Minimum operating temperature-40 °C
Oscillator typeLVCMOS
Output load15 pF
Maximum output low current2 mA
Encapsulate equivalent codeSOLCC4,.07,37
physical size2.0mm x 1.6mm x 0.75mm
longest rise time4.31 ns
Filter levelAEC-Q100
Maximum slew rate8 mA
Maximum supply voltage1.98 V
Minimum supply voltage1.62 V
Nominal supply voltage1.8 V
surface mountYES
maximum symmetry55/45 %
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)

SIT9025AER72R18EP1.000000 Preview

SiT9025
Features
AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Applications
Spread spectrum for EMI reduction
Wide spread % option
Center spread: from ±0.125% to ±2%, ±0.125% step size
Down spread: -0.25% to -4% with -0.25% step size
Spread profile option: Triangular, Hershey-kiss, Random
Programmable rise/fall time for EMI reduction: 8 options,
0.25 to 40 ns
AEC-Q100 with extended temperature range (-55°C to 125°C)
Any frequency between 1 MHz and 150 MHz accurate to
6 decimal places
100% pin-to-pin drop-in replacement to quartz-based XO’s
Excellent total frequency stability as low as ±25 ppm
Contact SiTime
for ±20 ppm option
Low power consumption of 6.6 mA typical at 1.8 V
Pin1 modes: Standby, output enable, or spread disable
LVCMOS output
Industry-standard packages
QFN: 2.0 x 1.6 mm
2
, 2.5 x 2.0 mm
2
, 3.2 x 2.5 mm
2
RoHS and REACH compliant, Pb-free, Halogen-free and
Antimony-free
Rear/Surround view camera
Driver monitor
ADAS ECU/CPU
High speed serial link
Electrical Specifications
Table 1. Electrical Characteristics
All Min and Max limits are specified over temperature and rated operating voltage with 15 pF output load unless otherwise stated.
Typical values are at 25°C and 3.3 V supply voltage.
Parameters
Output Frequency Range
Frequency Stability
[1]
Symbol
f
F_stab
Min.
1
-25
-50
Typ.
–
–
-
–
–
–
–
1.8
2.5
2.8
3.0
3.3
–
7.9
6.6
5.3
5.0
2.6
0.6
Max.
150
+25
+50
+85
+105
+125
+125
1.98
2.75
3.08
3.3
3.63
3.63
9.5
8.0
6.5
6.0
9.0
5.0
Unit
MHz
ppm
ppm
°C
°C
°C
°C
V
V
V
V
V
V
mA
mA
mA
mA
µA
µA
Condition
Frequency Range
Frequency Stability and Aging
Inclusive of initial tolerance at 25°C, 1st year aging at 25°C, and
variations over operating temperature, rated power supply voltage.
Spread = Off.
AEC-Q100 Grade 3
AEC-Q100 Grade 2
AEC-Q100 Grade 1
Extended cold AEC-Q100 Grade 1
Operating Temperature Range
Operating Temperature
Range
T_use
-40
-40
-40
-55
Supply Voltage
Vdd
1.62
2.25
2.52
2.7
2.97
2.25
Current Consumption
OE Disable Current
Standby Current
Idd
I_OD
I_std
–
–
–
–
–
–
Supply Voltage and Current Consumption
No load condition, f = 148.5 MHz, Vdd = 2.5 V to 3.3 V
No load condition, f = 148.5 MHz, Vdd = 1.8 V
f = 148.5 MHz, Vdd = 2.5 V to 3.3 V, OE = GND, Output in high-Z state
f = 148.5 MHz, Vdd = 1.8 V, OE = GND, Output in high-Z state
ST
= GND, Vdd = 2.5 V to 3.3 V, Output is weakly pulled down
ST
= GND, Vdd = 1.8 V, Output is weakly pulled down
Rev 1.01
September 9, 2020
www.sitime.com
SiT9025
AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Table 1. Electrical Characteristics
(continued)
Parameters
Duty Cycle
Rise/Fall Time
Output High Voltage
Symbol
DC
Tr, Tf
VOH
Min.
45
43
–
90%
Typ.
–
–
1.2
–
Max.
55
57
2.0
–
Unit
%
%
ns
Vdd
f = 1 to 137 MHz
f = 137.000001 to 150 MHz
20% - 80%, default derive strength
IOH = -4 mA (Vdd = 3.0 V or 3.3 V)
IOH = -3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOH = -2 mA (Vdd = 1.8 V)
IOL = 4 mA (Vdd = 3.0 V or 3.3 V)
IOL = 3 mA (Vdd = 2.8 V and Vdd = 2.5 V)
IOL = 2 mA (Vdd = 1.8 V)
Pin 1, OE or
ST
Pin 1, OE or
ST
Pin1,
ST
logic low
Pin1,
ST
logic high
Pin1, OE / SD logic low
Pin1, OE / SD logic high
Measured from the time Vdd reaches its rated minimum value
f = 148.5 MHz. For other frequencies, T_oe = 100 ns + 3 * cycles
Measured from the time ST pin crosses 50% threshold
Measured from the time SD pin crosses 50% threshold
Measured from the time SD pin crosses 50% threshold
f = 148.5 MHz, Vdd = 2.5 to 3.3 V, Spread = ON (or OFF)
f = 148.5 MHz, Vdd = 1.8 V, Spread = ON (or OFF)
Condition
LVCMOS Output Characteristics
Output Low Voltage
VOL
–
–
10%
Vdd
Input Characteristics
Input High Voltage
Input Low Voltage
Input Leakage Current
VIH
VIL
IL
70%
–
–
–
–
–
Startup Time
Enable/Disable Time
Resume Time
Spread Enable Time
Spread Disable Time
Cycle-to-cycle jitter
Note:
T_start
T_oe
T_resume
T_sde
T_sdde
T_ccj
–
–
–
–
–
–
–
1.
Contact SiTime
for ±20 ppm option.
–
–
-2.3
2.8
-24.6
3.2
–
–
–
–
–
10.5
10.8
–
30%
–
–
–
–
10
215
10
4
55
–
–
Vdd
Vdd
µA
µA
µA
µA
ms
ns
ms
µs
µs
Jitter
ps
ps
Startup and Resume Timing
Table 2. Spread Spectrum %
[3]
Ordering Code
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
P
Center Spread
(%)
±0.125
±0.250
±0.390
±0.515
±0.640
±0.765
±0.905
±1.030
±1.155
±1.280
±1.420
±1.545
±1.670
±1.795
±1.935
±2.060
Down Spread
(%)
-0.25
-0.50
-0.78
-1.04
-1.29
-1.55
-1.84
-2.10
-2.36
-2.62
-2.91
-3.18
-3.45
-3.71
-4.01
-4.28
Table 3. Spread Profile
[2,3]
Spread Profile
Triangular
Hershey-kiss
Random
Notes:
2. In both Triangular and Hershey-kiss profiles, modulation rate is
employed with a frequency of ~31.25 kHz. In random profile,
modulation rate is ~ 8.6 kHz.
3. The random profile supports up to ±1.030% center spread
or -2.10% down spread (ordering codes A through H).
Rev 1.01
Page 2 of 3
www.sitime.com
SiT9025
AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Table 4. Pin Description
Pin
1
Symbol
OE /
ST
/
NC/ SD
Output
Enable
Standby
Functionality
H
[4]
: specified frequency output
L: output is high impedance. Only output driver is disabled.
H : specified frequency output
L: output is low (week pull down). Device goes to sleep mode.
Supply current reduced to I_std.
[4]
Top View
OE /
/
NC / SD
1
4
VDD
No Connect
Spread
Disable
2
3
4
Notes:
GND
OUT
VDD
Power
Output
Power
Pin1 has no function (Any voltage between 0 and Vdd or Open)
H: Spread = ON
L: Spread = OFF
Electrical ground
Oscillator output
Power supply voltage
[5]
GND
2
3
OUT
Figure 1. Pin Assignments
4. In OE or
ST
mode, a pull-up resistor of 10
kΩ
or less is recommended if pin 1 is not externally driven. If pin 1 needs to be left floating, use the NC option.
5. A capacitor of value 0.1 µF or higher between Vdd and GND is required.
Table 5. Absolute Maximum Limits
Attempted operation outside the absolute maximum ratings may cause permanent damage to the part. Actual performance of the
IC is only guaranteed within the operational specifications, not at absolute maximum ratings.
Parameter
Storage Temperature
Vdd
Electrostatic Discharge
Soldering Temperature (follow standard Pb free soldering guidelines)
Junction Temperature
[6]
Note:
6. Exceeding this temperature for extended period of time may damage the device.
Min.
-65
-0.5
–
–
–
Max.
150
4
2000
260
150
Unit
°C
V
V
°C
°C
Table 6. Maximum Operating Junction Temperature
[7]
Max Operating Temperature (ambient)
85°C
105°C
125°C
Note:
Maximum Operating Junction Temperature
95°C
115°C
135°C
7. Datasheet specifications are not guaranteed if junction temperature exceeds the maximum operating junction temperature.
Table 7. Environmental Compliance
Parameter
Mechanical Shock
Mechanical Vibration
Temperature Cycle
Solderability
Moisture Sensitivity Level
Condition/Test Method
MIL-STD-883F, Method 2002
MIL-STD-883F, Method 2007
JESD22, Method A104
MIL-STD-883F, Method 2003
MSL1 @ 260°C
Rev 1.01
Page 3 of 4
www.sitime.com
SiT9025
AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Timing Diagrams
90% Vdd
Pin 4 Voltage
Vdd
Vdd
50% Vdd
T_resume
T_start
No Glitch
[8]
during start up
ST Voltage
CLK Output
CLK Output
HZ
HZ
T_resume: Time to resume from ST
T_start: Time to start from power-off
Figure 2. Startup Timing
Figure 3. Standby Resume Timing (ST Mode Only)
50% Vdd
OE Voltage
CLK Output
Vdd
T_oe
Vdd
OE Voltage
50% Vdd
T_oe
HZ
CLK Output
HZ
T_oe: Time to put the output in High Z mode
T_oe: Time to re-enable the clock output
Figure 4. OE Enable Timing (OE Mode Only)
Figure 5. OE Disable Timing (OE Mode Only)
Vdd
50% Vdd
SD Voltage
T_sde
SD Voltage
Vdd
50% Vdd
T_sdde
Frequency
Deviation (%)
Modulation period = 32 µs (31.25 kHz)
Time (s)
Frequency
Deviation (%)
Time (s)
Figure 6. SD Enable Timing (SD Mode Only)
Note:
8. SiT9025 has “no runt” pulses and “no glitch” output during startup or resume.
Figure 7. SD Diable Timing (SD Mode Only)
Rev 1.01
Page 4 of 5
www.sitime.com
SiT9025
AEC-Q100, 1 to 150 MHz EMI Reduction Oscillator
Performance Plots
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
5.4
8.0
Current Consumption (mA)
5.2
5.0
4.8
4.6
4.4
OE Disable Current (mA)
7.5
7.0
6.5
6.0
5.5
5.0
4.5
4.0
0
20
40
60
80
100
120
140
0
20
40
60
80
100
120
140
Frequency (MHz)
Frequency (MHz)
Figure 8. OE Disable Current vs Frequency
Figure 9. Current Consumption vs Frequency
DUT1
DUT8
DUT15
DUT2
DUT9
DUT16
DUT3
FUT10
DUT17
DUT4
DUT11
DUT18
DUT5
DUT12
DUT19
DUT6
DUT13
DUT20
DUT7
DUT14
1.8 V
2.5 V
2.8 V
3.0 V
3.3 V
2.5
2.0
1.5
1.0
0.5
0.0
20
Frequency stability (ppm)
0
20
40
60
80
100
120
140
15
10
5
0
-5
-10
-15
-20
-40
-20
0
20
40
60
80
100
120
Standby Current (µA)
Frequency (MHz)
Temperature (°C)
Figure 10. Standby Current vs Frequency
1.8V
2.5V
2.8V
3.0V
3.3V
Figure 11. Frequency vs Temperature
Peak Cycle -to - Cycle Jitter (ps)
90
80
70
60
50
40
30
20
10
0
0
20
40
60
80
100
120
140
Frequency (MHz)
Figure 12. Cycle-to-cycle Jitter vs Frequency
(Spread profile: Triangular, Spread type: center,
Spread percentage: ±2.060%)
Rev 1.01
Page 5 of 6
www.sitime.com
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

Recommended Resources

Car battery charging circuit diagram

Additional power circuit design for USB devices

Electric contact pressure gauge water level automatic control circuit

NOT gate circuit with clamping diode output

Zener diode controlled Wien bridge

875p computer motherboard circuit diagram_024

Analysis of transistor drive circuit and level conversion
The transistor, whose full name should be semiconductor transistor, is also called bipolar transistor or crystal transistor. It is a semiconductor device that controls current. Its function is to ampl...
fish001 Analogue and Mixed Signal
[TI star product limited time purchase] + powerful TMDSCNCD280025C
I am very happy to participate in this event organized by EEworld. Not only can I enjoy shopping at a discount, but I can also recommend and win awards. I hope everyone has a chance to participate:The...
qditz Microcontroller MCU
Programmable high pass filter
[i=s] This post was last edited by Electronic World Xiaobai on 2019-2-26 22:39 [/i] The programmable high-pass filter requires a passband of more than 10MHz and can be adjusted programmably. There is ...
电子世界小白 Analog electronics
EEWORLD University Hall----Live Replay: How Microchip protects your IP in cloud service connections
Live Replay: How Microchip protects your IP in cloud service connections : https://training.eeworld.com.cn/course/5511...
hi5 MCU
TI Bluetooth Solutions FAQs Frequently Asked Questions
[table=98%] [tr][td][align=left][font="][size=4][color=#000000][backcolor=white]FAQ answers to some common questions about TI's Bluetooth solution. Hope it can be helpful to everyone.[/backcolor][/col...
灞波儿奔 Wireless Connectivity
Free: Pingtouge RISC-V development board worth 390 yuan (100 sets in total), share the event to win a 100 yuan red envelope
100 sets of Pingtouge RISC-V Ecosystem Development Boards - RVB2601 worth RMB 390 are coming. Submit your ideas now and you will have a chance to win! There are also projectors, printers, and purifier...
nmg XuanTie RISC-V Activity Zone
Shortcut:   A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 AA AB AC AD AE AF AG AH AI AJ AK AL AM AN AO AP AQ AR AS AT AU AV AW AX AY AZ B0 B1 B2 B3 B4 B5 B6 B7 B8 B9 BA BB BC BD BE BF BG BH BI BJ BK BL BM BN BO BP BQ BR BS BT BU BV BW BX BY BZ C0 C1 C2 C3 C4 C5 C6 C7 C8 C9 CA CB CC CD CE CF CG CH CI CJ CK CL CM CN CO CP CQ CR CS CT CU CV CW CX CY CZ D0 D1 D2 D3 D4 D5 D6 D7 D8 D9 DA DB DC DD DE DF DG DH DI DJ DK DL DM DN DO DP DQ DR DS DT DU DV DW DX DZ

Popular Components

  1. 1241.2820.026
  2. SG73P2ATTD240G
  3. PCF1206-02-2K4BI
  4. 530AA1033M00BG
  5. R49AR347050B1KV
  6. MB918Y21B25SB
  7. IMC-18120.47UH+/-10%
  8. VI-RCW212-CXUYH1-CC
  9. 1.5SMC22CA_R1_00001
  10. P6SMBJ30C_R1_00001
  11. A1501WR-6P-D34-BK
  12. TC212B476M010Y

Popular Articles

  1. Application of wiring harness tester in automobile wiring harness testing and layout
  2. STM8 ADC conversion mode ------- continuous scan mode
  3. Digi-Key Electronics to Host In-Person and Virtual Events at 2021 ELEXCON
  4. ST launches ST4SIM M2M GSMA-compliant eSIM chip for mass market
  5. MeiG Smart exclusively won the bid for China Unicom's 5G AIoT smart module
  6. Pixelworks Semiconductor and MediaTek Enter into Collaboration Agreement
  7. Wingtech Technology: Anshi has developed new MOSFET products above 100v
  8. Lizhu Intelligent completed the B round of financing of over 100 million yuan, Pudong Science and Technology Innovation and Weihao Chuangxin institutions appeared
  9. TI's new buffer amplifier increases signal bandwidth tenfold in data acquisition systems
  10. DSP filtering technology for waveform reconstruction in oscilloscopes

Technical ResourceMore

  1. Two microcontrollers communicating
  2. VCA810 Data Sheet
  3. Start USB disk creation manual
  4. Wince serial port source code (Evc) rar.rar
  5. DOS Overview and Getting Started
  6. I just uploaded a
  7. NodeMCU is a wifi development board based on ESP8266
  8. Using these subroutines
  9. STK4181II.pdf
  10. Novel asymmetric half-bridge zero current inverter arc welding power supply.pdf

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2024 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号