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RGT16NS65DGTL

Description
Insulated Gate Bipolar Transistor, 16A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT, LPDS, 3/2 PIN
CategoryDiscrete semiconductor    The transistor   
File Size791KB,12 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
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RGT16NS65DGTL Overview

Insulated Gate Bipolar Transistor, 16A I(C), 650V V(BR)CES, N-Channel, ROHS COMPLIANT, LPDS, 3/2 PIN

RGT16NS65DGTL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionROHS COMPLIANT, LPDS, 3/2 PIN
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time17 weeks
Shell connectionCOLLECTOR
Maximum collector current (IC)16 A
Collector-emitter maximum voltage650 V
ConfigurationSINGLE WITH BUILT-IN DIODE
JESD-30 codeR-PSSO-G2
Number of components1
Number of terminals2
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsPOWER CONTROL
Transistor component materialsSILICON
Nominal off time (toff)170 ns
Nominal on time (ton)27 ns
Base Number Matches1
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