NP82N04PDG-E2-AY datasheet, PDF

NP82N04PDG-E2-AY: DescriptionSWITCHING N-CHANNEL POWER MOS FET; CategoryDiscrete semiconductor The transistor; File Size284KB，10 Pages; ManufacturerRenesas Electronics Corporation; Websitehttps://www.renesas.com/; Environmental Compliance

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NP82N04PDG-E2-AY Overview

SWITCHING N-CHANNEL POWER MOS FET

Parameter Name	Attribute value
Brand Name	Renesas
Is it Rohs certified?	conform to
Maker	Renesas Electronics Corporation
Parts packaging code	MP-25ZP
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	3
Manufacturer packaging code	PRSS0004AL-A3
Reach Compliance Code	compli
ECCN code	EAR99
Is Samacsys	N
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	40 V
Maximum drain current (Abs) (ID)	82 A
Maximum drain current (ID)	82 A
Maximum drain-source on-resistance	0.008 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	143 W
Maximum pulsed drain current (IDM)	328 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	MATTE TIN
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

	NP82N04PDG-E2-AY	NP82N04PDG_15
Description	SWITCHING N-CHANNEL POWER MOS FET	SWITCHING N-CHANNEL POWER MOS FET

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