PBRN113ET datasheet, PDF - EEWORLD Datasheet

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PBRN113ET: DescriptionNPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦; CategoryDiscrete semiconductor The transistor; File Size142KB，17 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBRN113ET Overview

NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦

PBRN113ET Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	compli
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	270
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.57 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

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PBRN113E series

NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ

Rev. 01 — 1 March 2007

Product data sheet

1. Product proﬁle

1.1 General description

800 mA NPN low V

CEsat

Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistors (RET) family in small plastic packages.

Table 1.

Product overview

Package

NXP

PBRN113EK

PBRN113ES

[1]

PBRN113ET

[1]

Type number

JEITA

SC-59A

SC-43A

JEDEC

TO-236

TO-92

TO-236AB

SOT346

SOT54

SOT23

Also available in SOT54A and SOT54 variant packages (see

Section 2).

1.2 Features

800 mA output current capability

High current gain h

Built-in bias resistors

Simpliﬁes circuit design

Low collector-emitter saturation voltage

CEsat

Reduces component count

Reduces pick and place costs

±10

% resistor ratio tolerance

1.3 Applications

Digital application in automotive and

industrial segments

Medium current peripheral driver

Switching loads

1.4 Quick reference data

Table 2.

Symbol

CEO

Quick reference data

Parameter

collector-emitter voltage

output current

PBRN113EK, PBRN113ET

PBRN113ES

Conditions

open base

[1]

Min

Typ

Max

600

800

Unit

PBRN113ET Related Products

	PBRN113ET	PBRN113E	PBRN113EK	PBRN113ES
Description	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦
Is it Rohs certified?	conform to	-	conform to	conform to
Maker	NXP	-	NXP	NXP
Parts packaging code	SOT-23	-	SOT-23	TO-92
package instruction	PLASTIC PACKAGE-3	-	SMALL OUTLINE, R-PDSO-G3	CYLINDRICAL, O-PBCY-T3
Contacts	3	-	3	3
Reach Compliance Code	compli	-	unknown	unknow
ECCN code	EAR99	-	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO 1	-	BUILT-IN BIAS RESISTOR RATIO 1	BUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)	0.7 A	-	0.7 A	0.8 A
Collector-emitter maximum voltage	40 V	-	40 V	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	270	-	270	270
JEDEC-95 code	TO-236AB	-	TO-236AB	TO-92
JESD-30 code	R-PDSO-G3	-	R-PDSO-G3	O-PBCY-T3
Number of components	1	-	1	1
Number of terminals	3	-	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	-	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	NPN	-	NPN	NPN
Maximum power dissipation(Abs)	0.57 W	-	0.57 W	0.7 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	YES	NO
Terminal form	GULL WING	-	GULL WING	THROUGH-HOLE
Terminal location	DUAL	-	DUAL	BOTTOM
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON

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