PBRN113EK datasheet, PDF - EEWORLD Datasheet

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PBRN113EK: DescriptionNPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦; CategoryDiscrete semiconductor The transistor; File Size142KB，17 Pages; ManufacturerNXP; Websitehttps://www.nxp.com; Environmental Compliance

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PBRN113EK Overview

NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦

PBRN113EK Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	NXP
Parts packaging code	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)	0.7 A
Collector-emitter maximum voltage	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	270
JEDEC-95 code	TO-236AB
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.57 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	SWITCHING
Transistor component materials	SILICON

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PBRN113E series

NPN 800 mA, 40 V BISS RETs; R1 = 1 kΩ, R2 = 1 kΩ

Rev. 01 — 1 March 2007

Product data sheet

1. Product proﬁle

1.1 General description

800 mA NPN low V

CEsat

Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistors (RET) family in small plastic packages.

Table 1.

Product overview

Package

NXP

PBRN113EK

PBRN113ES

[1]

PBRN113ET

[1]

Type number

JEITA

SC-59A

SC-43A

JEDEC

TO-236

TO-92

TO-236AB

SOT346

SOT54

SOT23

Also available in SOT54A and SOT54 variant packages (see

Section 2).

1.2 Features

800 mA output current capability

High current gain h

Built-in bias resistors

Simpliﬁes circuit design

Low collector-emitter saturation voltage

CEsat

Reduces component count

Reduces pick and place costs

±10

% resistor ratio tolerance

1.3 Applications

Digital application in automotive and

industrial segments

Medium current peripheral driver

Switching loads

1.4 Quick reference data

Table 2.

Symbol

CEO

Quick reference data

Parameter

collector-emitter voltage

output current

PBRN113EK, PBRN113ET

PBRN113ES

Conditions

open base

[1]

Min

Typ

Max

600

800

Unit

PBRN113EK Related Products

	PBRN113EK	PBRN113E	PBRN113ES	PBRN113ET
Description	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦	NPN 800 mA, 40 V BISS RETs; R1 = 1 kâ¦, R2 = 1 kâ¦
Is it Rohs certified?	conform to	-	conform to	conform to
Maker	NXP	-	NXP	NXP
Parts packaging code	SOT-23	-	TO-92	SOT-23
package instruction	SMALL OUTLINE, R-PDSO-G3	-	CYLINDRICAL, O-PBCY-T3	PLASTIC PACKAGE-3
Contacts	3	-	3	3
Reach Compliance Code	unknown	-	unknow	compli
ECCN code	EAR99	-	EAR99	EAR99
Other features	BUILT-IN BIAS RESISTOR RATIO 1	-	BUILT-IN BIAS RESISTOR RATIO 1	BUILT-IN BIAS RESISTOR RATIO 1
Maximum collector current (IC)	0.7 A	-	0.8 A	0.7 A
Collector-emitter maximum voltage	40 V	-	40 V	40 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	-	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	270	-	270	270
JEDEC-95 code	TO-236AB	-	TO-92	TO-236AB
JESD-30 code	R-PDSO-G3	-	O-PBCY-T3	R-PDSO-G3
Number of components	1	-	1	1
Number of terminals	3	-	3	3
Package body material	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	-	ROUND	RECTANGULAR
Package form	SMALL OUTLINE	-	CYLINDRICAL	SMALL OUTLINE
Polarity/channel type	NPN	-	NPN	NPN
Maximum power dissipation(Abs)	0.57 W	-	0.7 W	0.57 W
Certification status	Not Qualified	-	Not Qualified	Not Qualified
surface mount	YES	-	NO	YES
Terminal form	GULL WING	-	THROUGH-HOLE	GULL WING
Terminal location	DUAL	-	BOTTOM	DUAL
transistor applications	SWITCHING	-	SWITCHING	SWITCHING
Transistor component materials	SILICON	-	SILICON	SILICON

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