MB6S-G datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> MB6S-G

MB6S-G: Description0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size98KB，4 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

MB6S-G Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	MB6S-G	-	-	View	Buy Now

MB6S-G Overview

0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE

MB6S-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
package instruction	R-PDSO-G4
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	600 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	35 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	600 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30

Preview

Download Datasheet

View All

Glass Passivated Bridge Rectifiers

MB2S-G Thru. MB10S-G

Reverse Voltage: 200 to 1000 Volts

Forward Current: 0.8 Amp

RoHS Device

Features

0.276 (7.00)MAX

MBS

0.031 (0.84)

0.019 (0.50)

-Ideal for printed circuit board

-High temperature soldering guaranteed:

260°C / 10 seconds /9.5mm

Lead length at 5 lbs.,(2.3kg) tension.

0.157 (4.00)

0.142 (3.60)

Mechanical data

-Case: Molded plastic.

-Lead: Solder plated.

-Polarity: As marked.

-Weight:0.13

gram(approx.).

0.106 (2.70)

0.090 (2.30)

0.118(3.00)MAX

0.102 (2.60)

0.087 (2.20)

0.014 (0.35)

0.006 (0.15)

0.053 (1.53)

0.037 (0.95)

0.008 (0.20)max

0.083 (2.12)

0.043 (1.10)

0.193 (4.90)

0.177 (4.50)

0.053 (1.53)

0.037 (0.95)

Dimensions in inches and

(millimeters)

Maximum Rating And Electrical Characteristics

Rating at TA=25°C, unless otherwise noted.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Recurrent Current

Peak Forward Surge Current, 8.3mS Single

Half Sine-wave, Superimposed On Rated Load

(JEDEC Method)

Maximum Instantaneous Forward Voltage at 0.4A

Maximum DC Reverse Current

Rated DC Blocking Voltage per leg

Typical Thermal Resistance

(Note 1)

(Note 2)

Operating Temperature Range

Storage Temperature Range

=25°C

=125°C

Symbol

RRM

RMS

(AV)

MB2S-G

200

140

200

MB4S-G

400

280

400

MB6S-G

600

420

600

0.8

MB8S-G

800

560

800

MB10S-G Unit

1000

700

1000

FSM

θJA

θJL

STG

1.0

5.0

500

-55 to +150

°C/W

°C

Notes: 1. On aluminum suvstrate P.C.B. with an area of 0.8x0.8”(20x20mm) mounted on 0.05x0.05”(1.3x1.3mm) solder pad.

2.On glass epoxy P.C.B. mounted on 0.05x0.05”(1.3x1.3mm) pads.

REV: A

QW-BBR73

Page 1

Comchip Technology CO., LTD.

MB6S-G Related Products

	MB6S-G	MB10S-G	MB2S-G	MB4S-G	MB8S-G
Description	0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology
package instruction	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	600 V	1000 V	200 V	400 V	800 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	35 A	35 A	35 A	35 A	35 A
Number of components	4	4	4	4	4
Phase	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260
Maximum repetitive peak reverse voltage	600 V	1000 V	200 V	400 V	800 V
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30

Recommended Resources

Toy electronic keyboard circuit

Servo motor control circuit

Thyristor dimming lamp circuit with light stabilization function (3)

Dual output desktop power supply circuit

Battery safety charging alarm

Boost flyback single-stage isolated PFC converter with regenerative clamping function

Thank you + my son, my daughter, and my wife: Thank you + my son, my daughter, and my wife. Thank you for the many benefits that the Electronic Engineering World Welfare Club has given me this year!...; langcer Talking

Automobile and manufacturing equipment are emerging markets for sensors: According to the Japanese "Denpa Shimbun", in addition to the demand for sensors from various electronic information products, automotive products and manufacturing equipment products have become emer...; frozenviolet Automotive Electronics

Op amp circuit noise calculation: The following figure shows a description of various noise sources in an op amp circuit in a technical article from TI. Why is the gain resistor Rg so different, not rt4kTRg?...; 呜呼哀哉 Analog electronics

How to set breakpoints when debugging a program in keil4?: How to set breakpoints when debugging a program in keil4?...; QWE4562009 MCU

【Qinheng Trial】3. System clock and TIMER0: [i=s]This post was last edited by lising on 2019-7-2 15:02[/i]This experiment uses the internal timer resources of CH549 to generate timing and control the onboard LED flip to produce a flashing effec...; lising DIY/Open Source Hardware

XILINX DDR3 IP Core Usage Tutorial: This tutorial uses an example to explain the use of DDR3 (a common notebook memory stick) on the Xilinx platform. The following are the tools you must prepare to follow this tutorial:Xilinx ISE 14.1 o...; arui1999 Download Centre

Shortcut: E0 E1 E2 E3 E4 E5 E6 E7 E8 E9 EA EB EC ED EE EF EG EH EI EJ EK EL EM EN EO EP EQ ER ES ET EU EV EW EX EY EZ F0 F1 F2 F3 F4 F5 F6 F7 F8 F9 FA FB FC FD FE FF FG FH FI FJ FK FL FM FN FO FP FQ FR FS FT FU FV FW FX FY FZ G0 G1 G2 G3 G4 G5 G6 G7 G8 G9 GA GB GC GD GE GF GG GH GI GJ GK GL GM GN GO GP GQ GR GS GT GU GV GW GX GZ H0 H1 H2 H3 H4 H5 H6 H7 H8 HA HB HC HD HE HF HG HH HI HJ HK HL HM HN HO HP HQ HR HS HT HU HV HW HX HY HZ I1 I2 I3 I4 I5 I6 I7 IA IB IC ID IE IF IG IH II IK IL IM IN IO IP IQ IR IS IT IU IV IW IX J0 J1 J2 J6 J7 JA JB JC JD JE JF JG JH JJ JK JL JM JN JP JQ JR JS JT JV JW JX JZ K0 K1 K2 K3 K4 K5 K6 K7 K8 K9 KA KB KC KD KE KF KG KH KI KJ KK KL KM KN KO KP KQ KR KS KT KU KV KW KX KY KZ

Popular Components