MB10S-G datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> diode> MB10S-G

MB10S-G: Description0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE; CategoryDiscrete semiconductor diode; File Size98KB，4 Pages; ManufacturerComchip Technology; Websitehttp://www.comchiptech.com/; Environmental Compliance

Download Datasheet Parametric Compare View All

MB10S-G Online Shopping

Suppliers	Part Number	Price	MOQ	In stock
	MB10S-G	-	-	View	Buy Now

MB10S-G Overview

0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE

MB10S-G Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Comchip Technology
package instruction	R-PDSO-G4
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	1000 V
Configuration	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON
Diode type	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G4
Maximum non-repetitive peak forward current	35 A
Number of components	4
Phase	1
Number of terminals	4
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Maximum output current	0.8 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Maximum repetitive peak reverse voltage	1000 V
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	30

Preview

Download Datasheet

View All

Glass Passivated Bridge Rectifiers

MB2S-G Thru. MB10S-G

Reverse Voltage: 200 to 1000 Volts

Forward Current: 0.8 Amp

RoHS Device

Features

0.276 (7.00)MAX

MBS

0.031 (0.84)

0.019 (0.50)

-Ideal for printed circuit board

-High temperature soldering guaranteed:

260°C / 10 seconds /9.5mm

Lead length at 5 lbs.,(2.3kg) tension.

0.157 (4.00)

0.142 (3.60)

Mechanical data

-Case: Molded plastic.

-Lead: Solder plated.

-Polarity: As marked.

-Weight:0.13

gram(approx.).

0.106 (2.70)

0.090 (2.30)

0.118(3.00)MAX

0.102 (2.60)

0.087 (2.20)

0.014 (0.35)

0.006 (0.15)

0.053 (1.53)

0.037 (0.95)

0.008 (0.20)max

0.083 (2.12)

0.043 (1.10)

0.193 (4.90)

0.177 (4.50)

0.053 (1.53)

0.037 (0.95)

Dimensions in inches and

(millimeters)

Maximum Rating And Electrical Characteristics

Rating at TA=25°C, unless otherwise noted.

Single phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Parameter

Maximum Recurrent Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

Maximum Average Forward

Recurrent Current

Peak Forward Surge Current, 8.3mS Single

Half Sine-wave, Superimposed On Rated Load

(JEDEC Method)

Maximum Instantaneous Forward Voltage at 0.4A

Maximum DC Reverse Current

Rated DC Blocking Voltage per leg

Typical Thermal Resistance

(Note 1)

(Note 2)

Operating Temperature Range

Storage Temperature Range

=25°C

=125°C

Symbol

RRM

RMS

(AV)

MB2S-G

200

140

200

MB4S-G

400

280

400

MB6S-G

600

420

600

0.8

MB8S-G

800

560

800

MB10S-G Unit

1000

700

1000

FSM

θJA

θJL

STG

1.0

5.0

500

-55 to +150

°C/W

°C

Notes: 1. On aluminum suvstrate P.C.B. with an area of 0.8x0.8”(20x20mm) mounted on 0.05x0.05”(1.3x1.3mm) solder pad.

2.On glass epoxy P.C.B. mounted on 0.05x0.05”(1.3x1.3mm) pads.

REV: A

QW-BBR73

Page 1

Comchip Technology CO., LTD.

MB10S-G Related Products

	MB10S-G	MB2S-G	MB4S-G	MB6S-G	MB8S-G
Description	0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 200 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 400 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 600 V, SILICON, BRIDGE RECTIFIER DIODE	0.5 A, 800 V, SILICON, BRIDGE RECTIFIER DIODE
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
Maker	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology	Comchip Technology
package instruction	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Reach Compliance Code	compli	compli	compli	compli	compli
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	1000 V	200 V	400 V	600 V	800 V
Configuration	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS	BRIDGE, 4 ELEMENTS
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE	BRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)	1 V	1 V	1 V	1 V	1 V
JESD-30 code	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4	R-PDSO-G4
Maximum non-repetitive peak forward current	35 A	35 A	35 A	35 A	35 A
Number of components	4	4	4	4	4
Phase	1	1	1	1	1
Number of terminals	4	4	4	4	4
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C	-55 °C
Maximum output current	0.8 A	0.8 A	0.8 A	0.8 A	0.8 A
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260	260	260
Maximum repetitive peak reverse voltage	1000 V	200 V	400 V	600 V	800 V
surface mount	YES	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL
Maximum time at peak reflow temperature	30	30	30	30	30

Recommended Resources

Use NE555 to make automatic door-controlled lights at night

Converter circuit with 12V input and 9V, 7.5V or 6V output

555 DC voltage doubler rectifier circuit

Low frequency modulator circuit

Phase loss protection circuit for three-phase three-wire system

DC shunt motor commutation circuit

Asynchronous Timing Design in ASIC.pdf: Asynchronous Timing Design in ASIC.pdf...; zxopenljx EE_FPGA Learning Park

[Repost] "Very Silly" Circuit Problem: [align=left][color=rgb(51, 51, 51)][font=宋体][size=4]Let's take a look at this "very silly" circuit question. How should we answer it? Or does it not need an answer at all? [/size][/font][/color][/alig...; tiankai001 Power technology

Interface corresponding to SNVS_TAMPER3 signal: A: Please tell me which GPIO the SNVS_TAMPER3 signal on the IMX6UL corresponds to and which document should I look at? The GPIO is not marked in the core board interface diagram. B: WIKI search http:/...; 明远智睿Lan Industrial Control Electronics

Looking for a good and available domestic accelerometer: I want to put an acceleration sensor in the handle of a DIY fast-charging soldering iron, so that it can automatically cool down or cut off the power when not used for a long time (forgot to turn it o...; littleshrimp Domestic Chip Exchange

nRF52832-QFAA Hardware Reference Design: [align=left][color=#333333][font=微软雅黑][size=2]Manufacturer: NORDIC[/size][/font][/color][/align][align=left][color=#333333][font=微软雅黑][font=微软雅黑][size=2]Package/Casing: QPN48[/size][/font][/font][/col...; 乐乐熊 RF/Wirelessly

How to design the MCU+8266 program structure: I have a project that I did on GD32F450, similar to ST's F427, using the freertos+HAL library generated by CUBE. There are two main tasks. The Main task is to use the signal converted from AC power as...; yup1983 Embedded System

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components