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RB160M-30

Description
Schottky diodes
CategoryDiscrete semiconductor   
File Size7MB,1 Pages
ManufacturerJCET
Websitehttp://www.cj-elec.com/

Jiangsu Changdian Technology Co., Ltd. focuses on semiconductor packaging and testing business, providing customers at home and abroad with a full range of solutions such as chip testing, packaging design, packaging testing, etc. The company was successfully listed on the Shanghai Main Board in 2003, becoming the first semiconductor packaging and testing listed company in China. It now has a national enterprise technology center and a postdoctoral research workstation. It is a national key high-tech enterprise, a supporting unit of the National Engineering Laboratory for High-density Integrated Circuits, and the chairman unit of the Integrated Circuit Packaging Technology Innovation Strategic Alliance.

Discrete devices: diodes (switching diodes, Schottky diodes (Schottky rectifiers), voltage regulator diodes, Pin diodes, TVS diodes, rectifier diodes, fast recovery diodes); transistors (Darlington tubes, digital transistors, MOSFETs); thyristors: silicon-controlled rectifiers, triacs; composite tubes: transistors + field-effect tubes, dual transistors, dual digital transistors, digital transistors + transistors, transistors + diodes, field-effect tubes + diodes, dual field-effect tubes. Voltage regulator circuit; energy-saving lamp charger switch tube

Lead frame: TO series (TO); SOD series (SOD); SOT series (TSOT, SOT); FBP series (WBFBP); QFN series (QFNWB, DFNWB, DFNFC, QFNFC); ​​QFP series (LQFP: PQFP: PLCC: TQFP); SIP series (SIP, HSIP, FSIP); SOP series (SOP, HSOP, SSOP, MSOP, HTSOP, TSSOP); DIP series (DIP, FDIP, SDIP); PDFN series; PQFN series; MIS series (MISFC, MISWB)

Nine core technologies: Through Silicon Via (TSV) packaging technology; SiP RF packaging technology; wafer-level 3D rewiring packaging process technology; copper bump interconnection technology; high-density FC-BGA packaging and testing technology (Flip Chip BGA); multi-turn array four-sided pinless packaging and testing technology; package body 3D stacking technology; 50μm or less ultra-thin chip 3D stacking packaging technology; MEMS multi-chip packaging technology; MIS packaging technology (pre-encapsulated interconnection system); BGA packaging technology, etc.

 

 

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RB160M-30 Overview

Schottky diodes

Features

Product Name: Schottky Diode


Product model: RB160M-30


product features:


Small Current Rectification


Low Voltage



Product parameters:


Pd power dissipation: 450mW


Io rectified current: 1000mA


VR reverse working voltage: 30V


VF forward buck: 0.48V


IR reverse current: 50uA


Trr Forward recovery time:



Package: SOD-123

RB160M-30 Preview

Download Datasheet
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOD-123 Plastic-Encapsulate Diodes
SOD-123
SCHOTTKY BARRIER DIODE
RB160M-30
FEATURES
Small Current Rectification
Low Voltage
MARKING: 73
MAXIMUM RATINGS ( T
a
=25
unless otherwise noted )
Symbol
V
R
I
O
I
FSM
P
D
R
θJA
T
j
T
stg
DC Blocking Voltage
Forward Current
Non-repetitive Peak Forward Surge Current @t<8.3ms
Power Dissipation
Thermal Resistance from Junction to Ambient
Junction Temperature
Storage Temperature
Parameter
Value
30
1
30
450
222
125
-55~+150
Unit
V
A
mW
℃/W
ELECTRICAL CHARACTERISTICS(T
a
=25
unless otherwise specified)
Parameter
Reverse current
Forward voltage
* Pulse test
Symbol
I
R
V
F(1)
V
F(2)
*
V
R
=15V
V
R
=30V
I
F
=500mA
I
F
=1000mA
Test conditions
Min
Typ
Max
20
50
0.46
0.48
Unit
μA
μA
V
A,Sep,2010
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