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U309

Description
RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size116KB,7 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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U309 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN

U309 Parametric

Parameter NameAttribute value
MakerTEMIC
package instructionTO-206AC (TO-52), 3 PIN
Reach Compliance Codeunknow
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
FET technologyJUNCTION
Maximum feedback capacitance (Crss)5 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeO-MBCY-W3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialMETAL
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountNO
Terminal formWIRE
Terminal locationBOTTOM
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

U309 Related Products

U309 J310 SST309 SST310 SST308
Description RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-220AA (TO-92), 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN
Maker TEMIC TEMIC TEMIC TEMIC TEMIC
package instruction TO-206AC (TO-52), 3 PIN TO-220AA (TO-92), 3 PIN TO-236, 3 PIN TO-236, 3 PIN TO-236, 3 PIN
Reach Compliance Code unknow unknown unknown unknown unknown
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 25 V 25 V 25 V 25 V 25 V
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
JESD-30 code O-MBCY-W3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 R-PDSO-G3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material METAL PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape ROUND ROUND RECTANGULAR RECTANGULAR RECTANGULAR
Package form CYLINDRICAL CYLINDRICAL SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO YES YES YES
Terminal form WIRE THROUGH-HOLE GULL WING GULL WING GULL WING
Terminal location BOTTOM BOTTOM DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
JEDEC-95 code - - TO-236 TO-236 TO-236
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