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SST308

Description
RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size116KB,7 Pages
ManufacturerTEMIC
Websitehttp://www.temic.de/
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SST308 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN

SST308 Parametric

Parameter NameAttribute value
MakerTEMIC
package instructionTO-236, 3 PIN
Reach Compliance Codeunknown
ConfigurationSINGLE
Minimum drain-source breakdown voltage25 V
FET technologyJUNCTION
JEDEC-95 codeTO-236
JESD-30 codeR-PDSO-G3
Number of components1
Number of terminals3
Operating modeDEPLETION MODE
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON

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Description RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-220AA (TO-92), 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN
Maker TEMIC TEMIC TEMIC TEMIC TEMIC
package instruction TO-236, 3 PIN TO-220AA (TO-92), 3 PIN TO-236, 3 PIN TO-236, 3 PIN TO-206AC (TO-52), 3 PIN
Reach Compliance Code unknown unknown unknown unknown unknow
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 25 V 25 V 25 V 25 V 25 V
FET technology JUNCTION JUNCTION JUNCTION JUNCTION JUNCTION
JESD-30 code R-PDSO-G3 O-PBCY-T3 R-PDSO-G3 R-PDSO-G3 O-MBCY-W3
Number of components 1 1 1 1 1
Number of terminals 3 3 3 3 3
Operating mode DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE DEPLETION MODE
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY METAL
Package shape RECTANGULAR ROUND RECTANGULAR RECTANGULAR ROUND
Package form SMALL OUTLINE CYLINDRICAL SMALL OUTLINE SMALL OUTLINE CYLINDRICAL
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES NO YES YES NO
Terminal form GULL WING THROUGH-HOLE GULL WING GULL WING WIRE
Terminal location DUAL BOTTOM DUAL DUAL BOTTOM
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON SILICON
JEDEC-95 code TO-236 - TO-236 TO-236 -
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