SST309 datasheet, PDF - EEWORLD Datasheet

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SST309: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size116KB，7 Pages; ManufacturerTEMIC; Websitehttp://www.temic.de/

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SST309 Overview

RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN

SST309 Parametric

Parameter Name	Attribute value
Maker	TEMIC
package instruction	TO-236, 3 PIN
Reach Compliance Code	unknown
Configuration	SINGLE
Minimum drain-source breakdown voltage	25 V
FET technology	JUNCTION
JEDEC-95 code	TO-236
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Operating mode	DEPLETION MODE
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON

SST309 Related Products

	SST309	J310	SST310	SST308	U309
Description	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-220AA (TO-92), 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN	RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN
Maker	TEMIC	TEMIC	TEMIC	TEMIC	TEMIC
package instruction	TO-236, 3 PIN	TO-220AA (TO-92), 3 PIN	TO-236, 3 PIN	TO-236, 3 PIN	TO-206AC (TO-52), 3 PIN
Reach Compliance Code	unknown	unknown	unknown	unknown	unknow
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	25 V	25 V	25 V	25 V	25 V
FET technology	JUNCTION	JUNCTION	JUNCTION	JUNCTION	JUNCTION
JESD-30 code	R-PDSO-G3	O-PBCY-T3	R-PDSO-G3	R-PDSO-G3	O-MBCY-W3
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	METAL
Package shape	RECTANGULAR	ROUND	RECTANGULAR	RECTANGULAR	ROUND
Package form	SMALL OUTLINE	CYLINDRICAL	SMALL OUTLINE	SMALL OUTLINE	CYLINDRICAL
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	YES	YES	NO
Terminal form	GULL WING	THROUGH-HOLE	GULL WING	GULL WING	WIRE
Terminal location	DUAL	BOTTOM	DUAL	DUAL	BOTTOM
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
JEDEC-95 code	TO-236	-	TO-236	TO-236	-

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