RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN
Parameter Name | Attribute value |
Maker | TEMIC |
package instruction | TO-236, 3 PIN |
Reach Compliance Code | unknown |
Configuration | SINGLE |
Minimum drain-source breakdown voltage | 25 V |
FET technology | JUNCTION |
JEDEC-95 code | TO-236 |
JESD-30 code | R-PDSO-G3 |
Number of components | 1 |
Number of terminals | 3 |
Operating mode | DEPLETION MODE |
Package body material | PLASTIC/EPOXY |
Package shape | RECTANGULAR |
Package form | SMALL OUTLINE |
Polarity/channel type | N-CHANNEL |
Certification status | Not Qualified |
surface mount | YES |
Terminal form | GULL WING |
Terminal location | DUAL |
transistor applications | AMPLIFIER |
Transistor component materials | SILICON |
SST310 | J310 | SST309 | SST308 | U309 | |
---|---|---|---|---|---|
Description | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-220AA (TO-92), 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Silicon, N-Channel, Junction FET, TO-236, TO-236, 3 PIN | RF Small Signal Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Junction FET, TO-206AC (TO-52), 3 PIN |
Maker | TEMIC | TEMIC | TEMIC | TEMIC | TEMIC |
package instruction | TO-236, 3 PIN | TO-220AA (TO-92), 3 PIN | TO-236, 3 PIN | TO-236, 3 PIN | TO-206AC (TO-52), 3 PIN |
Reach Compliance Code | unknown | unknown | unknown | unknown | unknow |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Minimum drain-source breakdown voltage | 25 V | 25 V | 25 V | 25 V | 25 V |
FET technology | JUNCTION | JUNCTION | JUNCTION | JUNCTION | JUNCTION |
JESD-30 code | R-PDSO-G3 | O-PBCY-T3 | R-PDSO-G3 | R-PDSO-G3 | O-MBCY-W3 |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 3 | 3 | 3 | 3 | 3 |
Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | METAL |
Package shape | RECTANGULAR | ROUND | RECTANGULAR | RECTANGULAR | ROUND |
Package form | SMALL OUTLINE | CYLINDRICAL | SMALL OUTLINE | SMALL OUTLINE | CYLINDRICAL |
Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
surface mount | YES | NO | YES | YES | NO |
Terminal form | GULL WING | THROUGH-HOLE | GULL WING | GULL WING | WIRE |
Terminal location | DUAL | BOTTOM | DUAL | DUAL | BOTTOM |
transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
JEDEC-95 code | TO-236 | - | TO-236 | TO-236 | - |