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1N5453A

Description
Variable Capacitance Diode, 56pF C(T), 30V, Silicon, DO-7
CategoryDiscrete semiconductor    diode   
File Size45KB,1 Pages
ManufacturerInternational Semiconductor Inc
Download Datasheet Parametric View All

1N5453A Overview

Variable Capacitance Diode, 56pF C(T), 30V, Silicon, DO-7

1N5453A Parametric

Parameter NameAttribute value
MakerInternational Semiconductor Inc
package instructionO-LALF-W2
Reach Compliance Codeunknow
ECCN codeEAR99
Minimum breakdown voltage30 V
Shell connectionISOLATED
ConfigurationSINGLE
Diode Capacitance Tolerance10%
Minimum diode capacitance ratio2.6
Nominal diode capacitance56 pF
Diode component materialsSILICON
Diode typeVARIABLE CAPACITANCE DIODE
JEDEC-95 codeDO-7
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.4 W
Certification statusNot Qualified
minimum quality factor200
Maximum repetitive peak reverse voltage30 V
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
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