HYMD512M646DLFP8-J datasheet, PDF

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HYMD512M646DLFP8-J: Description200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA); File Size327KB，17 Pages; ManufacturerSK Hynix; Websitehttp://www.hynix.com/eng/

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HYMD512M646DLFP8-J Overview

200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)

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200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)

This Hynix unbuffered Small Outline, Dual In-Line Memory Module (DIMM) series consists of 512Mb D ver.

DDR SDRAMs in 60 ball FBGA packages on a 200pin glass-epoxy substrate. This Hynix 512Mb D ver. based unbuffered

SO-DIMM series provide a high performance 8 byte interface in 67.60mm width form factor of industry standard.

It is suitable for easy interchange and addition.

FEATURES

•

JEDEC Standard 200-pin small outline, dual in-line

memory module (SO-DIMM)

Two ranks 128M x 64 organization

2.6V

0.1V VDD and VDDQ Power supply for

DDR400, 2.5V

0.2V for DDR333 and below

All inputs and outputs are compatible with SSTL_2

interface

Fully differential clock operations (CK & /CK) with

133/166/200MHz

DLL aligns DQ and DQS transition with CK transition

Programmable CAS Latency : DDR266(2.5 clock),

DDR333(2.5 clock), DDR400(3 clock)

•

Programmable Burst Length 2 / 4 / 8 with both

sequential and interleave mode

Edge-aligned DQS with data outs and Center-aligned

DQS with data inputs

Auto refresh and self refresh supported

8192 refresh cycles / 64ms

Serial Presence Detect (SPD) with EEPROM

Built with 512Mb DDR SDRAMs in 60 ball

FBGA packages

All lead-free products (RoHS compliant)

ADDRESS TABLE

Organization

1GB

128M x 64

Ranks

SDRAMs

64Mb x 8

# of DRAMs

# of row/bank/column Address

13(A0~A12)/2(BA0,BA1)/11(A0~A9,A11)

Refresh

Method

8K / 64ms

PERFORMANCE RANGE

Part-Number Suffix

Speed Bin

CL - tRCD- tRP

CL=3

Max Clock

Frequency

CL=2.5

CL=2

-D43

DDR400B

3-3-3

200

166

133

-J

DDR333

2.5-3-3

166

133

-H

DDR266B

2.5-3-3

133

Note:

1. 2.6V

0.1V VDD and VDDQ Power supply for DDR400 and 2.5V

0.2V for DDR333 and below

This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any

responsibility for use of circuits described. No patent licenses are implied.

Rev. 1.0 / June 2007

HYMD512M646DLFP8-J Related Products

	HYMD512M646DLFP8-J	HYMD512M646DFP8-D43	HYMD512M646DFP8-H	HYMD512M646DFP8-J	HYMD512M646DLFP8-D43	HYMD512M646DLFP8-H
Description	200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)	200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)	200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)	200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)	200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)	200pin DDR SDRAM SO-DIMMs based on 512Mb D ver. (FBGA)

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