APT30GT60AR
600V
40A
Thunderbolt IGBT
The Thunderbolt IGBT
™
is a new generation of high voltage power IGBTs.
Using Non-Punch Through Technology the Thunderbolt IGBT™ offers superior
ruggedness and ultrafast switching speed.
TO-3
(TO-204AE)
• Low Forward Voltage Drop
• Low Tail Current
• Avalanche Rated
• Hermetic Package
MAXIMUM RATINGS
Symbol
V
CES
V
CGR
V
EC
V
GE
I
C1
I
C2
I
CM
I
LM
E
AS
P
D
T
J
,T
STG
T
L
Parameter
Collector-Emitter Voltage
• High Freq. Switching to 150KHz
• Ultra Low Leakage Current
• RBSOA and SCSOA Rated
G
E
C
All Ratings: T
C
= 25°C unless otherwise specified.
APT30GT60AR
UNIT
Collector-Gate Voltage (R
GE
= 20KW)
Emitter-Collector Voltage
Gate-Emitter Voltage
Continuous Collector Current @ T
C
= 25°C
Continuous Collector Current @ T
C
= 90°C
Pulsed Collector Current
1
RBSOA Clamped Inductive Load Current @ R
g
= 11W T
C
= 125°C
Single Pulse Avalanche Energy
Total Power Dissipation
2
Operating and Storage Junction Temperature Range
Max. Lead Temp. for Soldering: 0.063" from Case for 10 Sec.
Y
R
A
IN
IM
L
E
R
P
600
600
15
±20
40
30
80
60
65
@ T
C
= 25°C
Volts
Amps
mJ
Watts
°C
160
-55 to 150
300
STATIC ELECTRICAL CHARACTERISTICS
Symbol
BV
CES
RBV
CES
V
GE
(TH)
V
CE
(ON)
Characteristic / Test Conditions
Collector-Emitter Breakdown Voltage (V
GE
= 0V, I
C
= 0.5mA, T
j
= -55°C)
Collector-Emitter Reverse Breakdown Voltage (V
GE
= 0V, I
C
= 50mA)
Gate Threshold Voltage
(V
CE
= V
GE
, I
C
= 700µA, T
j
= 25°C)
MIN
TYP
MAX
UNIT
600
-15
3
1.6
4
2.0
5
2.5
2.8
40
1000
±100
µA
nA
050-5971 Rev - 5-2000
Volts
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 25°C)
Collector-Emitter On Voltage (V
GE
= 15V, I
C
= I
C2
, T
j
= 150°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 25°C)
Collector Cut-off Current (V
CE
= V
CES
, V
GE
= 0V, T
j
= 150°C)
Gate-Emitter Leakage Current (V
GE
= ±20V, V
CE
= 0V)
I
CES
I
GES
CAUTION:
These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
USA
EUROPE
405 S.W. Columbia Street
Chemin de Magret
Bend, Oregon 97702-1035
F-33700 Merignac - France
Phone: (541) 382-8028
Phone: (33) 5 57 92 15 15
FAX: (541) 388-0364
FAX: (33) 5 56 47 97 61
DYNAMIC CHARACTERISTICS
Symbol
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
t
d
(on)
t
r
t
d
(off)
t
f
t
d
(on)
t
r
t
d
(off)
t
f
E
on
E
off
E
ts
t
d
(on)
t
r
t
d
(off)
t
f
E
ts
gfe
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
3
APT30GT60AR
Test Conditions
Capacitance
V
GE
= 0V
V
CE
= 25V
f = 1 MHz
Gate Charge
V
GE
= 15V
V
CC
= 0.5V
CES
I
C
= I
C2
Resistive Switching (25°C)
V
GE
= 15V
V
CC
= 0.8V
CES
I
C
= I
C2
R
G
= 10W
MIN
TYP
MAX
UNIT
1600
155
90
140
60
12
14
55
190
140
18
30
ns
nC
pF
Gate-Emitter Charge
Gate-Collector ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy
Turn-off Switching Energy
Total Switching Losses
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Y
R
A
IN
IM
L
E
R
P
Inductive Switching (150°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10W
ns
300
25
0.5
1.2
1.7
18
30
T
J
= +150°C
mJ
Inductive Switching (25°C)
V
CLAMP
(Peak) = 0.66V
CES
V
GE
= 15V
I
C
= I
C2
R
G
= 10W
ns
260
20
Total Switching Losses
Forward Transconductance
T
J
= +25°C
V
CE
= 20V, I
C
= I
C2
1.3
6
mJ
S
THERMAL CHARACTERISTICS
Symbol
R
QJC
R
QJA
Characteristic
Junction to Case
Junction to Ambient
MIN
TYP
MAX
UNIT
°C/W
0.78
40
1
2
3
050-5971 Rev - 5-2000
Repetitive Rating: Pulse width limited by maximum junction temperature.
I
C
= I
C2
, R
GE
= 25
W
, L = 144µH, T
j
= 25°C
See MIL-STD-750 Method 3471
APT Reserves the right to change, without notice, the specifications and information contained herein.
Development Kits Review Area
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