The PESD4V0Y1BBSF and PESD4V0X2UM combine high surge withstand, very low trigger voltage and extremely low clamping voltage, providing an efficient solution for protecting sensitive systems
Nijmegen, December 19, 2022 : Nexperia, the expert in high-volume production of essential semiconductor devices, announces the addition of new products to the Nexperia TrEOS portfolio, namely the PESD4V0Y1BBSF and PESD4V0X2UM very low clamping voltage ESD protection diodes. These devices combine high surge withstand, very low trigger voltage and very low clamping voltage with wide passband, excellent surge immunity and excellent IEC61000-4-5 surge level.
“Nexperia has developed the TrEOS portfolio specifically to offer our customers a range of high-performance ESD protection solutions for applications such as USB3.2, USB4™, Thunderbolt™, HDMI 2.1 and Universal Flash,” said Stefan Seider, Senior Product Manager at Nexperia . “The fast switching speeds of the PESD4V0Y1BBSF and PESD4V0X2UM provide extremely effective suppression of ESD spikes on high-speed data lines, while their low trigger voltage helps significantly reduce the energy contained in IEC61000-4-5 8/20 µs surge pulses.”
The single data line PESD4V0Y1BBSF is available in a low inductance DSN0603-2 package with a trigger voltage of 6.3 V TLP, typical device robustness and capacitance of 25 A 8/20 µs and 0.7 pF, respectively. The clamping voltage provided by the PESD4V0Y1BBSF is only 2.4 V at 16 A 100 ns TLP and only 3.4 V at 20 A 8/20 µs surge. The dual data line PESD4V0X2UM is available in a compact DFN1006-3 package with a trigger voltage of 8 V, typical device robustness of more than 14 A 8/20 µs, and typical device capacitance of 0.82 pF.
While both devices provide excellent protection for USB2.0 D+/D- lines, the PESD4V0Y1BBSF has an S21 passband of over 7.5 GHz, making it suitable for USB3.x at 5 Gbps. Both devices offer a high level of surge immunity, with outstanding IEC61000-4-5 surge levels.
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