IRFZ24LPBF datasheet, PDF - EEWORLD Datasheet

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IRFZ24LPBF: DescriptionPower MOSFET; CategoryDiscrete semiconductor The transistor; File Size165KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

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IRFZ24LPBF Overview

Power MOSFET

IRFZ24LPBF Parametric

Parameter Name	Attribute value
package instruction	,
Reach Compliance Code	unknow
Is Samacsys	N
Configuration	Single
Maximum drain current (Abs) (ID)	17 A
FET technology	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	175 °C
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
surface mount	NO
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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IRFZ24LPBF Related Products

	IRFZ24LPBF	IRFZ24L	SIHFZ24L-E3	SIHFZ24S	SIHFZ24S-E3	SIHFZ24S-GE3	SIHFZ24STRR-GE3	IRFZ24STRR
Description	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	MOSFET N-CH 60V 17A D2PAK
package instruction	,	IN-LINE, R-PSIP-T3	,	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	compli	unknow	unknow	unknow	unknow	unknow	unknown
Configuration	Single	SINGLE WITH BUILT-IN DIODE	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)	17 A	17 A	17 A	17 A	17 A	17 A	17 A	17 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	60 W	60 W	60 W	60 W	60 W	60 W	60 W	60 W
surface mount	NO	NO	NO	YES	YES	YES	YES	YES
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	225	-	240	260	260	260	NOT SPECIFIED
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	-	30	40	40	40	NOT SPECIFIED
Is it lead-free?	-	Contains lead	-	Contains lead	Lead free	Lead free	Lead free	-
Is it Rohs certified?	-	incompatible	-	incompatible	conform to	conform to	conform to	incompatible
Parts packaging code	-	TO-262AA	-	D2PAK	D2PAK	D2PAK	D2PAK	D2PAK
Contacts	-	3	-	4	4	4	4	4
ECCN code	-	EAR99	-	EAR99	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	-	100 mJ	-	100 mJ	100 mJ	100 mJ	100 mJ	100 mJ
Shell connection	-	DRAIN	-	DRAIN	DRAIN	DRAIN	DRAIN	DRAIN
Minimum drain-source breakdown voltage	-	60 V	-	60 V	60 V	60 V	60 V	60 V
Maximum drain current (ID)	-	17 A	-	17 A	17 A	17 A	17 A	17 A
Maximum drain-source on-resistance	-	0.1 Ω	-	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω
JEDEC-95 code	-	TO-262AA	-	TO-263AB	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 code	-	R-PSIP-T3	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	-	1	-	1	1	1	1	1
Number of terminals	-	3	-	2	2	2	2	2
Operating mode	-	ENHANCEMENT MODE	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	-	PLASTIC/EPOXY	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	-	RECTANGULAR	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	-	IN-LINE	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Maximum pulsed drain current (IDM)	-	68 A	-	68 A	68 A	68 A	68 A	68 A
Certification status	-	Not Qualified	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal form	-	THROUGH-HOLE	-	GULL WING	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	-	SINGLE	-	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	-	SWITCHING	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	-	SILICON	-	SILICON	SILICON	SILICON	SILICON	SILICON
Maker	-	-	Vishay	Vishay	Vishay	Vishay	Vishay	Vishay

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