SIHFZ24S datasheet, PDF - EEWORLD Datasheet

Datasheet> All Categories > Discrete semiconductor> The transistor> SIHFZ24S

SIHFZ24S: DescriptionPower MOSFET; CategoryDiscrete semiconductor The transistor; File Size165KB，6 Pages; ManufacturerVishay; Websitehttp://www.vishay.com

Download Datasheet Parametric Compare View All

SIHFZ24S Overview

Power MOSFET

SIHFZ24S Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Vishay
Parts packaging code	D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2
Contacts	4
Reach Compliance Code	unknow
ECCN code	EAR99
Other features	ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	100 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	60 V
Maximum drain current (Abs) (ID)	17 A
Maximum drain current (ID)	17 A
Maximum drain-source on-resistance	0.1 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	60 W
Maximum pulsed drain current (IDM)	68 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON

Preview

Download Datasheet

View All

SIHFZ24S Related Products

	SIHFZ24S	IRFZ24L	IRFZ24LPBF	SIHFZ24L-E3	SIHFZ24S-E3	SIHFZ24S-GE3	SIHFZ24STRR-GE3	IRFZ24STRR
Description	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	Power MOSFET	MOSFET N-CH 60V 17A D2PAK
package instruction	SMALL OUTLINE, R-PSSO-G2	IN-LINE, R-PSIP-T3	,	,	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknow	compli	unknow	unknow	unknow	unknow	unknow	unknown
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	Single	Single	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Maximum drain current (Abs) (ID)	17 A	17 A	17 A	17 A	17 A	17 A	17 A	17 A
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
Maximum operating temperature	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C	175 °C
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum power dissipation(Abs)	60 W	60 W	60 W	60 W	60 W	60 W	60 W	60 W
surface mount	YES	NO	NO	NO	YES	YES	YES	YES
Is it lead-free?	Contains lead	Contains lead	-	-	Lead free	Lead free	Lead free	-
Is it Rohs certified?	incompatible	incompatible	-	-	conform to	conform to	conform to	incompatible
Maker	Vishay	-	-	Vishay	Vishay	Vishay	Vishay	Vishay
Parts packaging code	D2PAK	TO-262AA	-	-	D2PAK	D2PAK	D2PAK	D2PAK
Contacts	4	3	-	-	4	4	4	4
ECCN code	EAR99	EAR99	-	-	EAR99	EAR99	EAR99	EAR99
Avalanche Energy Efficiency Rating (Eas)	100 mJ	100 mJ	-	-	100 mJ	100 mJ	100 mJ	100 mJ
Shell connection	DRAIN	DRAIN	-	-	DRAIN	DRAIN	DRAIN	DRAIN
Minimum drain-source breakdown voltage	60 V	60 V	-	-	60 V	60 V	60 V	60 V
Maximum drain current (ID)	17 A	17 A	-	-	17 A	17 A	17 A	17 A
Maximum drain-source on-resistance	0.1 Ω	0.1 Ω	-	-	0.1 Ω	0.1 Ω	0.1 Ω	0.1 Ω
JEDEC-95 code	TO-263AB	TO-262AA	-	-	TO-263AB	TO-263AB	TO-263AB	TO-263AB
JESD-30 code	R-PSSO-G2	R-PSIP-T3	-	-	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	-	-	1	1	1	1
Number of terminals	2	3	-	-	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	-	-	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	-	-	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	-	-	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	IN-LINE	-	-	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	240	225	NOT SPECIFIED	-	260	260	260	NOT SPECIFIED
Maximum pulsed drain current (IDM)	68 A	68 A	-	-	68 A	68 A	68 A	68 A
Certification status	Not Qualified	Not Qualified	-	-	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Terminal form	GULL WING	THROUGH-HOLE	-	-	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	-	-	SINGLE	SINGLE	SINGLE	SINGLE
Maximum time at peak reflow temperature	30	NOT SPECIFIED	NOT SPECIFIED	-	40	40	40	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	-	-	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	-	-	SILICON	SILICON	SILICON	SILICON

Recommended Resources

Inductive high voltage alarm circuit 4

Internal circuit of TTL type 555 circuit

TA7222AP audio IC circuit diagram

New kitchen air cleaner circuit diagram

Gain programmable isolation amplifier circuit

Capacitor negative feedback sawtooth wave circuit (1)

One picture lets you understand TE's various industrial motor sensors: Excerpted from TE WeChat: https://mp.weixin.qq.com/s/6A8DgsLCdPG-8GbvFenRsgIf you want to know more, please click here to make an appointment for TE's "The Development and Latest Applications of Senso...; nmg Integrated technical exchanges

[Project Source Code] How to forcefully delete the device driver when a device driver conflict causes a blue screen: This article and design code were written by FPGA enthusiast Xiao Meige. Without the author's permission, this article is only allowed to be copied and reproduced on online forums, and the original au...; 小梅哥 Altera SoC

A beginner is asking for help. The source code of two different LPC1768 chips, the QEIPOS register is not used: There are two projects, one has the define value of QEIPOS register in the header file lpc1700.h, and the other has only a typedef struct in LPC17xx.h. I don't quite understand how to use this registe...; yunhai14 NXP MCU

I2C Controlled 6A Three-Level Switch-Mode Single Cell Battery Charger: BQ25910 I2C controlled 6A three-stage switch-mode shunt battery charger for single-cell fast charging...; qwqwqw2088 Analogue and Mixed Signal

The key to the warehouse was found, and the music phone from 15 years ago was unboxed!: Recently, I found a large number of new Motorola E2s in stock on Xianyu. Judging from the photos and the price of only over 100 yuan, they are unlikely to be refurbished. This price is almost unprofit...; eric_wang Mobile and portable

Application of OPT3004 in battery-powered cameras: Betty Guo In battery-powered applications, power consumption is a very important indicator. Battery-powered cameras usually use two MCUs to implement this, one ultra-low power MCU is in long-term work...; alan000345 TI Technology Forum

Shortcut: 00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components