Power MOSFET
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Parts packaging code | TO-262AA |
| package instruction | IN-LINE, R-PSIP-T3 |
| Contacts | 3 |
| Reach Compliance Code | compli |
| ECCN code | EAR99 |
| Is Samacsys | N |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (Abs) (ID) | 17 A |
| Maximum drain current (ID) | 17 A |
| Maximum drain-source on-resistance | 0.1 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-262AA |
| JESD-30 code | R-PSIP-T3 |
| JESD-609 code | e0 |
| Humidity sensitivity level | 1 |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Maximum operating temperature | 175 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | IN-LINE |
| Peak Reflow Temperature (Celsius) | 225 |
| Polarity/channel type | N-CHANNEL |
| Maximum power dissipation(Abs) | 60 W |
| Maximum pulsed drain current (IDM) | 68 A |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| Base Number Matches | 1 |
| IRFZ24L | IRFZ24LPBF | SIHFZ24L-E3 | SIHFZ24S | SIHFZ24S-E3 | SIHFZ24S-GE3 | SIHFZ24STRR-GE3 | IRFZ24STRR | |
|---|---|---|---|---|---|---|---|---|
| Description | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET | Power MOSFET | MOSFET N-CH 60V 17A D2PAK |
| package instruction | IN-LINE, R-PSIP-T3 | , | , | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 | SMALL OUTLINE, R-PSSO-G2 |
| Reach Compliance Code | compli | unknow | unknow | unknow | unknow | unknow | unknow | unknown |
| Configuration | SINGLE WITH BUILT-IN DIODE | Single | Single | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE |
| Maximum drain current (Abs) (ID) | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A | 17 A |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| Maximum operating temperature | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C | 175 °C |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Maximum power dissipation(Abs) | 60 W | 60 W | 60 W | 60 W | 60 W | 60 W | 60 W | 60 W |
| surface mount | NO | NO | NO | YES | YES | YES | YES | YES |
| Is it lead-free? | Contains lead | - | - | Contains lead | Lead free | Lead free | Lead free | - |
| Is it Rohs certified? | incompatible | - | - | incompatible | conform to | conform to | conform to | incompatible |
| Parts packaging code | TO-262AA | - | - | D2PAK | D2PAK | D2PAK | D2PAK | D2PAK |
| Contacts | 3 | - | - | 4 | 4 | 4 | 4 | 4 |
| ECCN code | EAR99 | - | - | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Avalanche Energy Efficiency Rating (Eas) | 100 mJ | - | - | 100 mJ | 100 mJ | 100 mJ | 100 mJ | 100 mJ |
| Shell connection | DRAIN | - | - | DRAIN | DRAIN | DRAIN | DRAIN | DRAIN |
| Minimum drain-source breakdown voltage | 60 V | - | - | 60 V | 60 V | 60 V | 60 V | 60 V |
| Maximum drain current (ID) | 17 A | - | - | 17 A | 17 A | 17 A | 17 A | 17 A |
| Maximum drain-source on-resistance | 0.1 Ω | - | - | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω | 0.1 Ω |
| JEDEC-95 code | TO-262AA | - | - | TO-263AB | TO-263AB | TO-263AB | TO-263AB | TO-263AB |
| JESD-30 code | R-PSIP-T3 | - | - | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 | R-PSSO-G2 |
| Number of components | 1 | - | - | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | - | - | 2 | 2 | 2 | 2 | 2 |
| Operating mode | ENHANCEMENT MODE | - | - | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | - | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | - | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | IN-LINE | - | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | 225 | NOT SPECIFIED | - | 240 | 260 | 260 | 260 | NOT SPECIFIED |
| Maximum pulsed drain current (IDM) | 68 A | - | - | 68 A | 68 A | 68 A | 68 A | 68 A |
| Certification status | Not Qualified | - | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Terminal form | THROUGH-HOLE | - | - | GULL WING | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | SINGLE | - | - | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | - | 30 | 40 | 40 | 40 | NOT SPECIFIED |
| transistor applications | SWITCHING | - | - | SWITCHING | SWITCHING | SWITCHING | SWITCHING | SWITCHING |
| Transistor component materials | SILICON | - | - | SILICON | SILICON | SILICON | SILICON | SILICON |
| Maker | - | - | Vishay | Vishay | Vishay | Vishay | Vishay | Vishay |
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