MWT-4GN datasheet, PDF - EEWORLD Datasheet

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MWT-4GN: DescriptionTRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal; CategoryDiscrete semiconductor The transistor; File Size196KB，4 Pages; ManufacturerMicrowave Technology Inc.

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MWT-4GN Overview

TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal

MWT-4GN Parametric

Parameter Name	Attribute value
Maker	Microwave Technology Inc.
package instruction	UNCASED CHIP, R-XUUC-N4
Reach Compliance Code	unknown
Other features	LOW NOISE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
FET technology	METAL SEMICONDUCTOR
highest frequency band	K BAND
JESD-30 code	R-XUUC-N4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Maximum operating temperature	150 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE

MWT-4GN Related Products

	MWT-4GN	MWT-473SN	MWT-473GN	MWT-4SN	MWT-470GN
Description	TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET
package instruction	UNCASED CHIP, R-XUUC-N4	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4	UNCASED CHIP, R-XUUC-N4	MICROWAVE, S-CQMW-F4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	6 V	6 V	6 V	6 V	6 V
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	K BAND	K BAND	K BAND	K BAND	K BAND
JESD-30 code	R-XUUC-N4	X-CXMW-F4	X-CXMW-F4	R-XUUC-N4	S-CQMW-F4
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR	UNSPECIFIED	UNSPECIFIED	RECTANGULAR	SQUARE
Package form	UNCASED CHIP	MICROWAVE	MICROWAVE	UNCASED CHIP	MICROWAVE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	NO LEAD	FLAT	FLAT	NO LEAD	FLAT
Terminal location	UPPER	UNSPECIFIED	UNSPECIFIED	UPPER	QUAD
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Maker	Microwave Technology Inc.	Microwave Technology Inc.	-	-	Microwave Technology Inc.
Maximum operating temperature	150 °C	175 °C	-	150 °C	175 °C
Shell connection	-	SOURCE	SOURCE	-	SOURCE
Base Number Matches	-	1	1	1	-

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