TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal
| Parameter Name | Attribute value |
| package instruction | UNCASED CHIP, R-XUUC-N4 |
| Reach Compliance Code | unknown |
| Other features | LOW NOISE |
| Configuration | SINGLE |
| Minimum drain-source breakdown voltage | 6 V |
| FET technology | METAL SEMICONDUCTOR |
| highest frequency band | K BAND |
| JESD-30 code | R-XUUC-N4 |
| Number of components | 1 |
| Number of terminals | 4 |
| Operating mode | DEPLETION MODE |
| Maximum operating temperature | 150 °C |
| Package body material | UNSPECIFIED |
| Package shape | RECTANGULAR |
| Package form | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL |
| Minimum power gain (Gp) | 7.5 dB |
| Certification status | Not Qualified |
| surface mount | YES |
| Terminal form | NO LEAD |
| Terminal location | UPPER |
| transistor applications | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE |
| Base Number Matches | 1 |
| MWT-4SN | MWT-473SN | MWT-473GN | MWT-470GN | MWT-4GN | |
|---|---|---|---|---|---|
| Description | TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal |
| package instruction | UNCASED CHIP, R-XUUC-N4 | MICROWAVE, X-CXMW-F4 | MICROWAVE, X-CXMW-F4 | MICROWAVE, S-CQMW-F4 | UNCASED CHIP, R-XUUC-N4 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| Other features | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE | LOW NOISE |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum drain-source breakdown voltage | 6 V | 6 V | 6 V | 6 V | 6 V |
| FET technology | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR | METAL SEMICONDUCTOR |
| highest frequency band | K BAND | K BAND | K BAND | K BAND | K BAND |
| JESD-30 code | R-XUUC-N4 | X-CXMW-F4 | X-CXMW-F4 | S-CQMW-F4 | R-XUUC-N4 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 4 | 4 | 4 | 4 | 4 |
| Operating mode | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE | DEPLETION MODE |
| Package body material | UNSPECIFIED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | CERAMIC, METAL-SEALED COFIRED | UNSPECIFIED |
| Package shape | RECTANGULAR | UNSPECIFIED | UNSPECIFIED | SQUARE | RECTANGULAR |
| Package form | UNCASED CHIP | MICROWAVE | MICROWAVE | MICROWAVE | UNCASED CHIP |
| Polarity/channel type | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL | N-CHANNEL |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | YES | YES | YES | YES | YES |
| Terminal form | NO LEAD | FLAT | FLAT | FLAT | NO LEAD |
| Terminal location | UPPER | UNSPECIFIED | UNSPECIFIED | QUAD | UPPER |
| transistor applications | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER | AMPLIFIER |
| Transistor component materials | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE | GALLIUM ARSENIDE |
| Maximum operating temperature | 150 °C | 175 °C | - | 175 °C | 150 °C |
| Base Number Matches | 1 | 1 | 1 | - | - |
| Maker | - | Microwave Technology Inc. | - | Microwave Technology Inc. | Microwave Technology Inc. |
| Shell connection | - | SOURCE | SOURCE | SOURCE | - |
Analog electronics
RF/Wirelessly
Analogue and Mixed Signal
Mobile and portable
Analogue and Mixed Signal
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