MWT-473GN datasheet, PDF - EEWORLD Datasheet

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MWT-473GN: DescriptionRF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET; CategoryDiscrete semiconductor The transistor; File Size196KB，4 Pages; ManufacturerMicrowave Technology Inc.

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MWT-473GN Overview

RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET

MWT-473GN Parametric

Parameter Name	Attribute value
package instruction	MICROWAVE, X-CXMW-F4
Reach Compliance Code	unknown
Other features	LOW NOISE
Shell connection	SOURCE
Configuration	SINGLE
Minimum drain-source breakdown voltage	6 V
FET technology	METAL SEMICONDUCTOR
highest frequency band	K BAND
JESD-30 code	X-CXMW-F4
Number of components	1
Number of terminals	4
Operating mode	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	UNSPECIFIED
Package form	MICROWAVE
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	UNSPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE
Base Number Matches	1

MWT-473GN Related Products

	MWT-473GN	MWT-473SN	MWT-4SN	MWT-470GN	MWT-4GN
Description	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal	RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET	TRANSISTOR K BAND, GaAs, N-CHANNEL, RF SMALL SIGNAL, MESFET, FET RF Small Signal
package instruction	MICROWAVE, X-CXMW-F4	MICROWAVE, X-CXMW-F4	UNCASED CHIP, R-XUUC-N4	MICROWAVE, S-CQMW-F4	UNCASED CHIP, R-XUUC-N4
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Other features	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE	LOW NOISE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum drain-source breakdown voltage	6 V	6 V	6 V	6 V	6 V
FET technology	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR	METAL SEMICONDUCTOR
highest frequency band	K BAND	K BAND	K BAND	K BAND	K BAND
JESD-30 code	X-CXMW-F4	X-CXMW-F4	R-XUUC-N4	S-CQMW-F4	R-XUUC-N4
Number of components	1	1	1	1	1
Number of terminals	4	4	4	4	4
Operating mode	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE	DEPLETION MODE
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED	CERAMIC, METAL-SEALED COFIRED	UNSPECIFIED
Package shape	UNSPECIFIED	UNSPECIFIED	RECTANGULAR	SQUARE	RECTANGULAR
Package form	MICROWAVE	MICROWAVE	UNCASED CHIP	MICROWAVE	UNCASED CHIP
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	YES	YES	YES	YES
Terminal form	FLAT	FLAT	NO LEAD	FLAT	NO LEAD
Terminal location	UNSPECIFIED	UNSPECIFIED	UPPER	QUAD	UPPER
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE	GALLIUM ARSENIDE
Shell connection	SOURCE	SOURCE	-	SOURCE	-
Base Number Matches	1	1	1	-	-
Maker	-	Microwave Technology Inc.	-	Microwave Technology Inc.	Microwave Technology Inc.
Maximum operating temperature	-	175 °C	150 °C	175 °C	150 °C

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