IS62WV12816EALL-55TLI datasheet, PDF

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IS62WV12816EALL-55TLI: DescriptionStandard SRAM, 128KX16, 55ns, CMOS, PDSO44, TSOP2-44; Categorystorage storage; File Size647KB，17 Pages; ManufacturerIntegrated Silicon Solution ( ISSI ); Environmental Compliance

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IS62WV12816EALL-55TLI Overview

Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, TSOP2-44

IS62WV12816EALL-55TLI Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Integrated Silicon Solution ( ISSI )
package instruction	TSOP2,
Reach Compliance Code	compliant
Factory Lead Time	8 weeks
Maximum access time	55 ns
JESD-30 code	R-PDSO-G44
length	18.41 mm
memory density	2097152 bit
Memory IC Type	STANDARD SRAM
memory width	16
Number of functions	1
Number of terminals	44
word count	131072 words
character code	128000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128KX16
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP2
Package shape	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum seat height	1.2 mm
Maximum supply voltage (Vsup)	2.2 V
Minimum supply voltage (Vsup)	1.65 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	10.16 mm

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IS62WV12816EALL

IS62/65WV12816EBLL

128Kx16 LOW VOLTAGE,

ULTRA LOW POWER CMOS STATIC RAM

KEY FEATURES



High-speed access time: 45ns, 55ns

CMOS low power operation

– Operating Current: 18 mA (max) at 85°C

– CMOS Standby Current: 5.4uA (typ) at 25°C



TTL compatible interface levels

Single power supply

–1.65V-2.2V V

(IS62WV12816EALL)

– 2.2V-3.6V V

(IS62/65WV12816EBLL)

Three state outputs

Industrial and Automotive temperature support

Lead-free available

MAY 2017

DESCRIPTION

The

ISSI

IS62/65WV12816EALL/EBLL are high-speed, 2M

bit static RAMs organized as 128K words by 16 bits. It is

fabricated using

ISSI's

high-performance CMOS technology.

This highly reliable process coupled with innovative circuit

design techniques, yields high-performance and low power

consumption devices.

When CS1# is HIGH

(deselected) or when CS2 is LOW

(deselected) or when

CS1# is LOW,

CS2 is HIGH and

both

LB# and UB# are HIGH,

the device assumes a standby

mode at which the power dissipation can be reduced down

with CMOS input levels.

Easy memory expansion is provided by using Chip Enable

and Output Enable inputs. The active LOW Write Enable

(WE#) controls both writing and reading of the memory. A

data byte allows Upper Byte (UB#) and Lower Byte (LB#)

access.

The IS62/65WV12816EALL/EBLL are packaged in the

JEDEC standard 48-pin mini BGA (6mm x 8mm) and 44-Pin

TSOP (TYPE II)



BLOCK DIAGRAM

128K x 16

MEMORY

ARRAY

A0 – A16

DECODER

VDD

GND

I/O0 – I/O7

Lower Byte

I/O8 – I/O15

Upper Byte

CS2

CS1#

OE#

WE#

UB#

LB#

I/O

DATA

CIRCUIT

COLUMN I/O

CONTROL

CIRCUIT

without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to

obtain the latest version of this device specification before relying on any published information and before placing orders for products.

Integrated Silicon Solution, Inc. does not recommend the use of any of its products in life support applications where the failure or malfunction of the product can

reasonably be expected to cause failure of the life support system or to significantly affect its safety or effectiveness. Products are not authorized for use in such

applications unless Integrated Silicon Solution, Inc. receives written assurance to its satisfaction, that:

a.) the risk of injury or damage has been minimized;

b.) the user assume all such risks; and

c.) potential liability of Integrated Silicon Solution, Inc is adequately protected under the circumstances

Integrated Silicon Solution, Inc.-

www.issi.com

Rev. C2

05/24/2017

IS62WV12816EALL-55TLI Related Products

	IS62WV12816EALL-55TLI	IS62WV12816EBLL-45TLI	IS62WV12816EBLL-45BLI	IS62WV12816EALL-55BLI	IS62WV12816EBLL-45TLI-TR	IS62WV12816EALL-55BLI-TR
Description	Standard SRAM, 128KX16, 55ns, CMOS, PDSO44, TSOP2-44	Standard SRAM, 128KX16, 45ns, CMOS, PDSO44, 0.400 INCH, LEAD FREE, TSOP2-44	Standard SRAM, 128KX16, 45ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI BGA-48	Standard SRAM, 128KX16, 55ns, CMOS, PBGA48, 6 X 8 MM, LEAD FREE, MO-207, MINI BGA-48	IC SRAM 2MBIT 45NS 44TSOP	Standard SRAM,
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to	conform to
package instruction	TSOP2,	TSOP2,	TFBGA,	6 X 8 MM, LEAD FREE, MO-207, MINI BGA-48	TSOP2,	TFBGA,
Reach Compliance Code	compliant	compli	compli	compliant	compliant	compliant
Factory Lead Time	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks	8 weeks
Maximum access time	55 ns	45 ns	45 ns	55 ns	45 ns	55 ns
JESD-30 code	R-PDSO-G44	R-PDSO-G44	R-PBGA-B48	R-PBGA-B48	R-PDSO-G44	R-PBGA-B48
length	18.41 mm	18.41 mm	8 mm	8 mm	18.41 mm	8 mm
memory density	2097152 bit	2097152 bi	2097152 bi	2097152 bit	2097152 bit	2097152 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	16	16	16	16	16	16
Number of functions	1	1	1	1	1	1
Number of terminals	44	44	48	48	44	48
word count	131072 words	131072 words	131072 words	131072 words	131072 words	131072 words
character code	128000	128000	128000	128000	128000	128000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
organize	128KX16	128KX16	128KX16	128KX16	128KX16	128KX16
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TSOP2	TSOP2	TFBGA	TFBGA	TSOP2	TFBGA
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	SMALL OUTLINE, THIN PROFILE	GRID ARRAY, THIN PROFILE, FINE PITCH
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	2.2 V	3.6 V	3.6 V	2.2 V	3.6 V	2.2 V
Minimum supply voltage (Vsup)	1.65 V	2.2 V	2.2 V	1.65 V	2.2 V	1.65 V
surface mount	YES	YES	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL	INDUSTRIAL
Terminal form	GULL WING	GULL WING	BALL	BALL	GULL WING	BALL
Terminal pitch	0.8 mm	0.8 mm	0.75 mm	0.75 mm	0.8 mm	0.75 mm
Terminal location	DUAL	DUAL	BOTTOM	BOTTOM	DUAL	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	10.16 mm	10.16 mm	6 mm	6 mm	10.16 mm	6 mm
Maker	Integrated Silicon Solution ( ISSI )	-	-	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )	Integrated Silicon Solution ( ISSI )
Nominal supply voltage (Vsup)	1.8 V	3 V	3 V	-	3 V	1.8 V

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