AOZ8211DI-12 datasheet, PDF - EEWORLD Datasheet

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AOZ8211DI-12: DescriptionTrans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2; CategoryDiscrete semiconductor diode; File Size350KB，7 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about; Environmental Compliance

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AOZ8211DI-12 Overview

Trans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2

AOZ8211DI-12 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	1154911618
package instruction	R-XBCC-N2
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	6.03
Minimum breakdown voltage	14 V
Maximum clamping voltage	21 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-XBCC-N2
Maximum non-repetitive peak reverse power dissipation	100 W
Number of components	1
Number of terminals	2
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Guideline	IEC-61000-4-2
Maximum repetitive peak reverse voltage	12 V
surface mount	YES
technology	AVALANCHE
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

AOZ8211DI-12 Related Products

	AOZ8211DI-12	AOZ8211DI-02	AOZ8211DI-03	AOZ8211DI-05	AOZ8211DI-24
Description	Trans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2	Trans Voltage Suppressor Diode, 50W, 2.5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2	TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,12V V(RWM),LLCC	Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2	Trans Voltage Suppressor Diode, 110W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2
Reach Compliance Code	compliant	compliant	compli	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	14 V	2.8 V	3.7 V	6 V	27 V
Maximum clamping voltage	21 V	9.5 V	9.5 V	10 V	37 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2
Maximum non-repetitive peak reverse power dissipation	100 W	50 W	55 W	50 W	110 W
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Guideline	IEC-61000-4-2	IEC-61000-4-2	IEC-61000-4-2	IEC-61000-4-2	IEC-61000-4-2
Maximum repetitive peak reverse voltage	12 V	2.5 V	3.3 V	5 V	24 V
surface mount	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Objectid	1154911618	1154911615	-	1154911617	1154911619
Country Of Origin	Mainland China	Mainland China	-	Mainland China	Mainland China
YTEOL	6.03	6.03	-	6.05	6.38

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