Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2
Parameter Name | Attribute value |
Is it Rohs certified? | conform to |
Objectid | 1154911617 |
package instruction | R-XBCC-N2 |
Reach Compliance Code | compliant |
Country Of Origin | Mainland China |
ECCN code | EAR99 |
YTEOL | 6.05 |
Minimum breakdown voltage | 6 V |
Maximum clamping voltage | 10 V |
Configuration | SINGLE |
Diode component materials | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | R-XBCC-N2 |
Maximum non-repetitive peak reverse power dissipation | 50 W |
Number of components | 1 |
Number of terminals | 2 |
Maximum operating temperature | 85 °C |
Minimum operating temperature | -40 °C |
Package body material | UNSPECIFIED |
Package shape | RECTANGULAR |
Package form | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
polarity | UNIDIRECTIONAL |
Guideline | IEC-61000-4-2 |
Maximum repetitive peak reverse voltage | 5 V |
surface mount | YES |
technology | AVALANCHE |
Terminal form | NO LEAD |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
AOZ8211DI-05 | AOZ8211DI-02 | AOZ8211DI-03 | AOZ8211DI-12 | AOZ8211DI-24 | |
---|---|---|---|---|---|
Description | Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 | Trans Voltage Suppressor Diode, 50W, 2.5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 | TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,12V V(RWM),LLCC | Trans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 | Trans Voltage Suppressor Diode, 110W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 |
Is it Rohs certified? | conform to | conform to | conform to | conform to | conform to |
package instruction | R-XBCC-N2 | R-XBCC-N2 | R-XBCC-N2 | R-XBCC-N2 | R-XBCC-N2 |
Reach Compliance Code | compliant | compliant | compli | compliant | compliant |
ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
Minimum breakdown voltage | 6 V | 2.8 V | 3.7 V | 14 V | 27 V |
Maximum clamping voltage | 10 V | 9.5 V | 9.5 V | 21 V | 37 V |
Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
Diode type | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE | TRANS VOLTAGE SUPPRESSOR DIODE |
JESD-30 code | R-XBCC-N2 | R-XBCC-N2 | R-XBCC-N2 | R-XBCC-N2 | R-XBCC-N2 |
Maximum non-repetitive peak reverse power dissipation | 50 W | 50 W | 55 W | 100 W | 110 W |
Number of components | 1 | 1 | 1 | 1 | 1 |
Number of terminals | 2 | 2 | 2 | 2 | 2 |
Maximum operating temperature | 85 °C | 85 °C | 85 °C | 85 °C | 85 °C |
Minimum operating temperature | -40 °C | -40 °C | -40 °C | -40 °C | -40 °C |
Package body material | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED | UNSPECIFIED |
Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
Package form | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER | CHIP CARRIER |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
polarity | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL | UNIDIRECTIONAL |
Guideline | IEC-61000-4-2 | IEC-61000-4-2 | IEC-61000-4-2 | IEC-61000-4-2 | IEC-61000-4-2 |
Maximum repetitive peak reverse voltage | 5 V | 2.5 V | 3.3 V | 12 V | 24 V |
surface mount | YES | YES | YES | YES | YES |
technology | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE | AVALANCHE |
Terminal form | NO LEAD | NO LEAD | NO LEAD | NO LEAD | NO LEAD |
Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
Objectid | 1154911617 | 1154911615 | - | 1154911618 | 1154911619 |
Country Of Origin | Mainland China | Mainland China | - | Mainland China | Mainland China |
YTEOL | 6.05 | 6.03 | - | 6.03 | 6.38 |