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AOZ8211DI-05

Description
Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2
CategoryDiscrete semiconductor    diode   
File Size350KB,7 Pages
ManufacturerAlpha & Omega Semiconductor
Websitehttp://www.aosmd.com/about
Environmental Compliance
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AOZ8211DI-05 Overview

Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2

AOZ8211DI-05 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
Objectid1154911617
package instructionR-XBCC-N2
Reach Compliance Codecompliant
Country Of OriginMainland China
ECCN codeEAR99
YTEOL6.05
Minimum breakdown voltage6 V
Maximum clamping voltage10 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 codeR-XBCC-N2
Maximum non-repetitive peak reverse power dissipation50 W
Number of components1
Number of terminals2
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
GuidelineIEC-61000-4-2
Maximum repetitive peak reverse voltage5 V
surface mountYES
technologyAVALANCHE
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED

AOZ8211DI-05 Related Products

AOZ8211DI-05 AOZ8211DI-02 AOZ8211DI-03 AOZ8211DI-12 AOZ8211DI-24
Description Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 Trans Voltage Suppressor Diode, 50W, 2.5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,12V V(RWM),LLCC Trans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2 Trans Voltage Suppressor Diode, 110W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2
Is it Rohs certified? conform to conform to conform to conform to conform to
package instruction R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2
Reach Compliance Code compliant compliant compli compliant compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99
Minimum breakdown voltage 6 V 2.8 V 3.7 V 14 V 27 V
Maximum clamping voltage 10 V 9.5 V 9.5 V 21 V 37 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2 R-XBCC-N2
Maximum non-repetitive peak reverse power dissipation 50 W 50 W 55 W 100 W 110 W
Number of components 1 1 1 1 1
Number of terminals 2 2 2 2 2
Maximum operating temperature 85 °C 85 °C 85 °C 85 °C 85 °C
Minimum operating temperature -40 °C -40 °C -40 °C -40 °C -40 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER CHIP CARRIER
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Guideline IEC-61000-4-2 IEC-61000-4-2 IEC-61000-4-2 IEC-61000-4-2 IEC-61000-4-2
Maximum repetitive peak reverse voltage 5 V 2.5 V 3.3 V 12 V 24 V
surface mount YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location BOTTOM BOTTOM BOTTOM BOTTOM BOTTOM
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Objectid 1154911617 1154911615 - 1154911618 1154911619
Country Of Origin Mainland China Mainland China - Mainland China Mainland China
YTEOL 6.05 6.03 - 6.03 6.38

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