AOZ8211DI-03 datasheet, PDF - EEWORLD Datasheet

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AOZ8211DI-03: DescriptionTRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,12V V(RWM),LLCC; CategoryDiscrete semiconductor diode; File Size350KB，7 Pages; ManufacturerAlpha & Omega Semiconductor; Websitehttp://www.aosmd.com/about; Environmental Compliance

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AOZ8211DI-03 Overview

TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,12V V(RWM),LLCC

AOZ8211DI-03 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Alpha & Omega Semiconductor
package instruction	R-XBCC-N2
Reach Compliance Code	compli
ECCN code	EAR99
Minimum breakdown voltage	3.7 V
Maximum clamping voltage	9.5 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-XBCC-N2
Maximum non-repetitive peak reverse power dissipation	55 W
Number of components	1
Number of terminals	2
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
Package body material	UNSPECIFIED
Package shape	RECTANGULAR
Package form	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Guideline	IEC-61000-4-2
Maximum repetitive peak reverse voltage	3.3 V
surface mount	YES
technology	AVALANCHE
Terminal form	NO LEAD
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED

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AOZ8211

0ne-line TVS Diode

General Description

The AOZ8211 is a one-line transient voltage suppressor

diode designed to protect voltage sensitive electronics

from high transient conditions and ESD.

This device incorporates one TVS diode in an ultra-small

DFN 1.0 mm x 0.6 mm package. During transient

conditions, the one-line TVS diode directs the transient

to ground. It may be used to meet the ESD immunity

requirements of IEC 61000-4-2, Level 4 (±15 kV air,

±8 kV contact discharge).

The AOZ8211 comes in an RoHS compliant package

and is rated over a -40 °C to +85 °C ambient temperature

range.

The ultra-small 1.0 mm x 0.6 mm x 0.5 mm DFN package

makes the AOZ8211 ideal for applications where PCB

space is at a premium. The small size and high ESD

protection makes the AOZ8211 ideal for protecting

voltage sensitive electronics from high transient

conditions and ESD.

Features

ESD protection for high-speed data lines:

AOZ8211DI-02

–

Exceeds: IEC 61000-4-2 (ESD) ±30 kV (air),

±30 kV (contact)

–

Human Body Model (HBM) ±30 kV

AOZ8211DI-03

–

Exceeds: IEC 61000-4-2 (ESD) ±30 kV (air),

±30 kV (contact)

–

Human Body Model (HBM) ±30 kV

AOZ8211DI-05

–

Exceeds: IEC 61000-4-2 (ESD) ±28 kV (air),

±28 kV (contact)

–

Human Body Model (HBM) ±30 kV

AOZ8211DI-12

–

Exceeds: IEC 61000-4-2 (ESD) ±28 kV (air),

±28 kV (contact)

–

Human Body Model (HBM) ±30 kV

AOZ8211DI-24

–

Exceeds: IEC 61000-4-2 (ESD) ±15 kV (air),

±18 kV (contact)

–

Human Body Model (HBM) ±30 kV

Small package saves board space

Low insertion loss

Low clamping voltage

Low operating voltage: 2.5 V, 3.3 V, 5 V, 12 V and 24 V

Applications

Portable handheld devices

Keypads, data lines, buttons

Notebook computers

Digital cameras

Portable GPS

MP3 players

Typical Application

Signal Line

Pin Configuration

Cathode 2

1 Anode

Unidirection Protection of Single Line

Rev. 1.4 January 2011

www.aosmd.com

Page 1 of 7

AOZ8211DI-03 Related Products

	AOZ8211DI-03	AOZ8211DI-02	AOZ8211DI-05	AOZ8211DI-12	AOZ8211DI-24
Description	TRANSIENT SUPPRESSOR DIODE,SINGLE,UNIDIRECTIONAL,12V V(RWM),LLCC	Trans Voltage Suppressor Diode, 50W, 2.5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2	Trans Voltage Suppressor Diode, 50W, 5V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2	Trans Voltage Suppressor Diode, 100W, 12V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2	Trans Voltage Suppressor Diode, 110W, 24V V(RWM), Unidirectional, 1 Element, Silicon, DFN-2
Is it Rohs certified?	conform to	conform to	conform to	conform to	conform to
package instruction	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2
Reach Compliance Code	compli	compliant	compliant	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99
Minimum breakdown voltage	3.7 V	2.8 V	6 V	14 V	27 V
Maximum clamping voltage	9.5 V	9.5 V	10 V	21 V	37 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE	TRANS VOLTAGE SUPPRESSOR DIODE
JESD-30 code	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2	R-XBCC-N2
Maximum non-repetitive peak reverse power dissipation	55 W	50 W	50 W	100 W	110 W
Number of components	1	1	1	1	1
Number of terminals	2	2	2	2	2
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C	85 °C
Minimum operating temperature	-40 °C	-40 °C	-40 °C	-40 °C	-40 °C
Package body material	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED	UNSPECIFIED
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER	CHIP CARRIER
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
polarity	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL	UNIDIRECTIONAL
Guideline	IEC-61000-4-2	IEC-61000-4-2	IEC-61000-4-2	IEC-61000-4-2	IEC-61000-4-2
Maximum repetitive peak reverse voltage	3.3 V	2.5 V	5 V	12 V	24 V
surface mount	YES	YES	YES	YES	YES
technology	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE	AVALANCHE
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Objectid	-	1154911615	1154911617	1154911618	1154911619
Country Of Origin	-	Mainland China	Mainland China	Mainland China	Mainland China
YTEOL	-	6.03	6.05	6.03	6.38

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