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Datasheet> All Categories > Discrete semiconductor> diode> W1856NC420
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W1856NC420

Description
DIODE 1856 A, 4200 V, SILICON, RECTIFIER DIODE, Rectifier Diode
CategoryDiscrete semiconductor    diode   
File Size268KB，10 Pages
ManufacturerIXYS
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W1856NC420 Overview

DIODE 1856 A, 4200 V, SILICON, RECTIFIER DIODE, Rectifier Diode

W1856NC420 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerIXYS
package instructionO-CEDB-N2
Reach Compliance Codeunknown
ECCN codeEAR99
applicationGENERAL PURPOSE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JESD-30 codeO-CEDB-N2
Maximum non-repetitive peak forward current21000 A
Number of components1
Phase1
Number of terminals2
Maximum output current1856 A
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeROUND
Package formDISK BUTTON
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Certification statusNot Qualified
Maximum repetitive peak reverse voltage4200 V
Maximum reverse recovery time36 µs
surface mountYES
Terminal formNO LEAD
Terminal locationEND
Maximum time at peak reflow temperatureNOT SPECIFIED

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WESTCODE
An
Date:- 21 Dec, 2004
Data Sheet Issue:- 1
IXYS
Company
Rectifier Diode
Types W1856NC400 to W1856NC500
Old Type No: SW40-50CXC815
Absolute Maximum Ratings
VOLTAGE RATINGS
V
RRM
V
RSM
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4000 - 5000
4100 - 5100
UNITS
V
V
OTHER RATINGS
I
F(AV)M
I
F(AV)M
I
F(AV)M
I
F(RMS)
I
F(d.c.)
I
FSM
I
FSM2
It
It
T
j op
T
stg
2
2
MAXIMUM
LIMITS
1856
1301
814
3399
3026
16
21
1.28×10
2.21×10
6
6
UNITS
A
A
A
A
A
kA
kA
As
As
°C
°C
2
2
Maximum average forward current, T
sink
=55°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 2)
Maximum average forward current. T
sink
=100°C, (note 3)
Nominal RMS forward current, T
sink
=25°C, (note 2)
D.C. forward current, T
sink
=25°C, (note 4)
Peak non-repetitive surge t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
Peak non-repetitive surge t
p
=10ms, V
rm
≤10V,
(note 5)
I t capacity for fusing t
p
=10ms, V
rm
=0.6V
RRM
, (note 5)
I t capacity for fusing t
p
=10ms, V
rm
≤10V,
(note 5)
Operating temperature range
Storage temperature range
2
2
-40 to +160
-55 to +160
Notes:-
1)
De-rating factor of 0.13% per °C is applicable for T
j
below 25°C.
2)
Double side cooled, single phase; 50Hz, 180° half-sinewave.
3)
Single side cooled, single phase; 50Hz, 180° half-sinewave.
4)
Double side cooled.
5)
Half-sinewave, 160°C T
j
initial.
Data Sheet. Types W1856NC400 to W1856NC500 Issue 1
Page 1 of 9
December, 2004

W1856NC420 Related Products

W1856NC420 W1856NC500 W1856NC400 W1856NC440 W1856NC460 W1856NC480
Description DIODE 1856 A, 4200 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1856 A, 5000 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1856 A, 4000 V, SILICON, RECTIFIER DIODE, Rectifier Diode DIODE 1856 A, 4400 V, SILICON, RECTIFIER DIODE, Rectifier Diode Rectifier Diode, 1 Phase, 1 Element, 1856A, 4600V V(RRM), Silicon, DIODE 1856 A, 4800 V, SILICON, RECTIFIER DIODE, Rectifier Diode
Is it lead-free? Contains lead Lead free Lead free Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible conform to conform to incompatible incompatible incompatible
Reach Compliance Code unknown unknow unknow unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
application GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
JESD-30 code O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2
Maximum non-repetitive peak forward current 21000 A 21000 A 21000 A 21000 A 21000 A 21000 A
Number of components 1 1 1 1 1 1
Phase 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2
Maximum output current 1856 A 1856 A 1856 A 1856 A 1856 A 1856 A
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
Package shape ROUND ROUND ROUND ROUND ROUND ROUND
Package form DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON DISK BUTTON
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum repetitive peak reverse voltage 4200 V 5000 V 4000 V 4400 V 4600 V 4800 V
Maximum reverse recovery time 36 µs 36 µs 36 µs 36 µs 36 µs 36 µs
surface mount YES YES YES YES YES YES
Terminal form NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD NO LEAD
Terminal location END END END END END END
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
package instruction O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 O-CEDB-N2 - O-CEDB-N2

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