W1856NC500 datasheet, PDF - EEWORLD Datasheet

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W1856NC500: DescriptionDIODE 1856 A, 5000 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size268KB，10 Pages; ManufacturerIXYS; Environmental Compliance

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W1856NC500 Overview

DIODE 1856 A, 5000 V, SILICON, RECTIFIER DIODE, Rectifier Diode

W1856NC500 Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	O-CEDB-N2
Reach Compliance Code	unknow
ECCN code	EAR99
application	GENERAL PURPOSE
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-CEDB-N2
Maximum non-repetitive peak forward current	21000 A
Number of components	1
Phase	1
Number of terminals	2
Maximum output current	1856 A
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND
Package form	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	5000 V
Maximum reverse recovery time	36 µs
surface mount	YES
Terminal form	NO LEAD
Terminal location	END
Maximum time at peak reflow temperature	NOT SPECIFIED
Base Number Matches	1

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WESTCODE

Date:- 21 Dec, 2004

Data Sheet Issue:- 1

IXYS

Company

Rectifier Diode

Types W1856NC400 to W1856NC500

Old Type No: SW40-50CXC815

Absolute Maximum Ratings

VOLTAGE RATINGS

RRM

RSM

Repetitive peak reverse voltage, (note 1)

Non-repetitive peak reverse voltage, (note 1)

MAXIMUM

LIMITS

4000 - 5000

4100 - 5100

UNITS

OTHER RATINGS

F(AV)M

F(RMS)

F(d.c.)

FSM

FSM2

j op

stg

MAXIMUM

LIMITS

1856

1301

814

3399

3026

1.28×10

2.21×10

UNITS

°C

Maximum average forward current, T

sink

=55°C, (note 2)

Maximum average forward current. T

sink

=100°C, (note 2)

Maximum average forward current. T

sink

=100°C, (note 3)

Nominal RMS forward current, T

sink

=25°C, (note 2)

D.C. forward current, T

sink

=25°C, (note 4)

Peak non-repetitive surge t

=10ms, V

=0.6V

RRM

, (note 5)

Peak non-repetitive surge t

=10ms, V

≤10V,

(note 5)

I t capacity for fusing t

=10ms, V

=0.6V

RRM

, (note 5)

I t capacity for fusing t

=10ms, V

≤10V,

(note 5)

Operating temperature range

Storage temperature range

-40 to +160

-55 to +160

Notes:-

De-rating factor of 0.13% per °C is applicable for T

below 25°C.

Double side cooled, single phase; 50Hz, 180° half-sinewave.

Single side cooled, single phase; 50Hz, 180° half-sinewave.

Double side cooled.

Half-sinewave, 160°C T

initial.

Data Sheet. Types W1856NC400 to W1856NC500 Issue 1

Page 1 of 9

December, 2004

W1856NC500 Related Products

	W1856NC500	W1856NC400	W1856NC440	W1856NC460	W1856NC420	W1856NC480
Description	DIODE 1856 A, 5000 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1856 A, 4000 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1856 A, 4400 V, SILICON, RECTIFIER DIODE, Rectifier Diode	Rectifier Diode, 1 Phase, 1 Element, 1856A, 4600V V(RRM), Silicon,	DIODE 1856 A, 4200 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1856 A, 4800 V, SILICON, RECTIFIER DIODE, Rectifier Diode
Is it lead-free?	Lead free	Lead free	Contains lead	Contains lead	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknow	unknow	unknow	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2
Maximum non-repetitive peak forward current	21000 A	21000 A	21000 A	21000 A	21000 A	21000 A
Number of components	1	1	1	1	1	1
Phase	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2
Maximum output current	1856 A	1856 A	1856 A	1856 A	1856 A	1856 A
Package body material	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED	CERAMIC, METAL-SEALED COFIRED
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	5000 V	4000 V	4400 V	4600 V	4200 V	4800 V
Maximum reverse recovery time	36 µs	36 µs	36 µs	36 µs	36 µs	36 µs
surface mount	YES	YES	YES	YES	YES	YES
Terminal form	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD	NO LEAD
Terminal location	END	END	END	END	END	END
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
package instruction	O-CEDB-N2	O-CEDB-N2	O-CEDB-N2	-	O-CEDB-N2	O-CEDB-N2

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